Jilin Sino Microelectronics JCS2N60VC IPAK MOSFET ideal for switch mode power supplies and lighting
Key Attributes
Model Number:
JCS2N60VC-IPAK
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
1.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
590pF
Pd - Power Dissipation:
44W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
JCS2N60VC-IPAK
Package:
TO-251
Product Description
Product Overview
The JCS2N60C is a high-performance N-channel MOSFET designed for high efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss (typical 3.1pF), fast switching speed, 100% avalanche tested, and improved dv/dt capability, all while being RoHS compliant.
Product Attributes
- Brand: JCS
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | ID (A) | VDSS (V) | Rdson-max () (Vgs=10V) | Qg-typ (nC) |
| JCS2N60TC-T-A / JCS2N60TC-T-AR | JCS2N60T | TO-92 | 2.0 | 600 | 5.0 | 8.1 |
| JCS2N60MFC-MF-B / JCS2N60MFC-MF-BR | JCS2N60MF | TO-126F | 2.0 | 600 | 5.0 | 8.1 |
| JCS2N60VC-V-B / JCS2N60VC-V-BR | JCS2N60V | IPAK | 2.0 | 600 | 5.0 | 8.1 |
| JCS2N60RC-R-B / JCS2N60RC-R-BR / JCS2N60RC-R-A / JCS2N60RC-R-AR | JCS2N60R | DPAK | 2.0 | 600 | 5.0 | 8.1 |
| JCS2N60CC-C-B / JCS2N60CC-C-BR | JCS2N60C | TO-220C | 2.0 | 600 | 5.0 | 8.1 |
| JCS2N60FC-F-B / JCS2N60FC-F-BR | JCS2N60F | TO-220MF | 2.0 | 600 | 5.0 | 8.1 |
| JCS2N60FC-F2-B / JCS2N60FC-F2-BR | JCS2N60F | TO-220MF-K2 | 2.0 | 600 | 5.0 | 8.1 |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | Notes |
| Drain-Source Voltage | VDSS | 600 | V | |
| Drain Current-continuous (T=25) | ID | 2.0 | A | *Limited by maximum junction temperature |
| Drain Current-continuous (T=100) | ID | 1.3 | A | *Limited by maximum junction temperature |
| Drain Current pulse | IDM | 8.0* | A | Note 1 |
| Gate-Source Voltage | VGSS | 30 | V | |
| Single Pulsed Avalanche Energy | EAS | 240 | mJ | Note 2 |
| Avalanche Current | IAR | 1.9 | A | Note 1 |
| Repetitive Avalanche Current | EAR | 4.2 | mJ | Note 1 |
| Peak Diode Recovery dv/dt | dv/dt | 4.6 | V/ns | Note 3 |
| Power Dissipation (TC=25) | PD | 44 (VC/RC/MFC), 54 (TC), 43.9 (CC), 4 (FC) | W | |
| Operating and Storage Temperature Range | TJ, TBSTG | -55+150 |
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 600 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ | ID=1mA, referenced to 25 | - | 0.6 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=480V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=1.0A, 25 | - | 3.8 | 5.0 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=1.0A, 100 | - | 6.65 | 10.0 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=1.0A, 150 | - | 9.88 | 14 | |
| Forward Transconductance | gfs | VDS = 40V , ID=1.0A (note 4) | - | 2.45 | - | S |
| Dynamic Characteristics | ||||||
| Gate resistance | Rg | F=1.0MHZ open drain | - | 1.8 | 6.5 | |
| Input capacitance | Ciss | VDS=25V,VGS =0V, f=1.0MHBZ | - | 80 | 590 | pF |
| Output capacitance | Coss | VDS=25V,VGS =0V, f=1.0MHBZ | - | 5 | 100 | pF |
| Reverse transfer capacitance | Crss | VDS=25V,VGS =0V, f=1.0MHBZ | - | 0.2 | 10 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=300V,ID=2.0A,RG=25 (note 4,5) | - | 16.7 | 45 | ns |
| Turn-On rise time | tr | VDD=300V,ID=2.0A,RG=25 (note 4,5) | - | 139 | 300 | ns |
| Turn-Off delay time | td(off) | VDD=300V,ID=2.0A,RG=25 (note 4,5) | - | 35.1 | 90 | ns |
| Turn-Off Fall time | tf | VDD=300V,ID=2.0A,RG=25 (note 4,5) | - | 12.2 | 43 | ns |
| Total Gate Charge | Qg | VDS =480V , ID=2.0A VGS =10V (note 4,5) | - | 8.1 | 15 | nC |
| Gate-Source charge | Qgs | VDS =480V , ID=2.0A VGS =10V (note 4,5) | - | 1.29 | 5 | nC |
| Gate-Drain charge | Qgd | VDS =480V , ID=2.0A VGS =10V (note 4,5) | - | 3.0 | 9 | nC |
| Drain-Source Diode Characteristics | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | - | 2.0 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 8.0 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=2.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=2.0A dIF/dt=100A/s (note 4) | - | 247 | 600 | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=2.0A dIF/dt=100A/s (note 4) | - | 1.04 | 3.0 | C |
Thermal Characteristics
| Parameter | Symbol | Max | Unit | Package |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.87 (VC/RC/MFC), 2.85 (TC), 2.32 (CC) | /W | VC/RC/MFC, TC, CC |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 110 (VC/RC/MFC), 120 (TC), 40.1 (FC) | /W | VC/RC/MFC, TC, FC |
2409280030_Jilin-Sino-Microelectronics-JCS2N60VC-IPAK_C272585.pdf
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