Low gate charge N channel MOSFET Jilin Sino Microelectronics JCS650C 220C for power supply switching and UPS
Key Attributes
Model Number:
JCS650C-220C
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
28A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
105pF
Number:
-
Input Capacitance(Ciss):
2.879nF
Output Capacitance(Coss):
470pF
Pd - Power Dissipation:
158W
Gate Charge(Qg):
136nC@10V
Mfr. Part #:
JCS650C-220C
Package:
TO-220
Product Description
Product Overview
The JCS650 is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability, making it a RoHS compliant product.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Model | Package | Order Codes | Marking | Main Characteristics | Applications |
| JCS650C | TO-220C | JCS650C-C-B, JCS650C-C-BR | JCS650C | ID: 28.0A, VDSS: 200V, Rds(on)-max (@Vgs=10V): 85m, Qg-typ: 103nC | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS |
| JCS650F | TO-220MF | JCS650F-F-B, JCS650F-F-BR | JCS650F | ID: 28.0A*, VDSS: 200V, Rds(on)-max (@Vgs=10V): 85m, Qg-typ: 103nC | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS |
| JCS650S | TO-263 | JCS650S-S-B, JCS650S-S-BR, JCS650S-S-A, JCS650S-S-AR | JCS650S | ID: 28.0A*, VDSS: 200V, Rds(on)-max (@Vgs=10V): 85m, Qg-typ: 103nC | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | JCS650C/S | JCS650F |
| Drain-Source Voltage | VDSS | ID=250A, VGS=0V | 200 | - | - | V | ✔ | ✔ |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V, VGS=0V, TC=25 | - | - | 1 | A | ✔ | ✔ |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V | ✔ | ✔ |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=14.0A | - | 68 | 85 | m | ✔ | ✔ |
| Input capacitance | Ciss | - | 2879 | 3742 | pF | ✔ | ✔ | |
| Output capacitance | Coss | - | 362 | 470 | pF | ✔ | ✔ | |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 81 | 105 | pF | ✔ | ✔ |
| Total Gate Charge | Qg | VDD=100V,ID=28A,RG=25 VGS =10V | - | 103 | 136 | nC | ✔ | ✔ |
| Thermal Resistance, Junction to Case | Rth(j-c) | - | 0.79 | 2.48 | /W | ✔ | ✔ | |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | - | 62.5 | - | /W | ✔ | ✔ |
2409271302_Jilin-Sino-Microelectronics-JCS650C-220C_C272538.pdf
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