Low Voltage PNP Switching Transistor Infineon MMBT2907ALT1HTSA1 with High Junction Temperature Rating
Key Attributes
Model Number:
MMBT2907ALT1HTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
330mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
MMBT2907ALT1HTSA1
Package:
SOT-23
Product Description
Product Overview
The SMBT2907A/MMBT2907A is a PNP Silicon Switching Transistor designed for various applications. It features a low collector-emitter saturation voltage and is Pb-free (RoHS compliant). This transistor is qualified according to AEC Q101 standards. Its complementary type is the SMBT2222A/MMBT2222A (NPN).
Product Attributes
- Brand: Infineon Technologies
- Certifications: AEC Q101, RoHS compliant
- Package: SOT23
- Type Marking: s2F
Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Maximum Ratings | |||
| Collector-emitter voltage | VCEO | 60 | V |
| Collector-base voltage | VCBO | 60 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 600 | mA |
| Base current | IB | 100 | mA |
| Peak base current | IBM | 200 | mA |
| Total power dissipation (TS 77 C) | Ptot | 330 | mW |
| Junction temperature | Tj | 150 | C |
| Storage temperature | Tstg | -65 ... 150 | C |
| Thermal Resistance | |||
| Junction - soldering point | RthJS | 220 | K/W |
| DC Characteristics | |||
| Collector-emitter breakdown voltage (IC = 10 mA, IB = 0) | V(BR)CEO | 60 | V |
| Collector-base breakdown voltage (IC = 10 A, IE = 0) | V(BR)CBO | 60 | V |
| Emitter-base breakdown voltage (IE = 10 A, IC = 0) | V(BR)EBO | 5 | V |
| Collector-base cutoff current (VCB = 50 V, IE = 0) | ICBO | - | A |
| Collector-base cutoff current (VCB = 50 V, IE = 0, TA = 150 C) | ICBO | 0.01 | A |
| Collector-base cutoff current (VCB = 50 V, IE = 0, TA = 150 C) | ICBO | 10 | A |
| Emitter-base cutoff current (VEB = 5 V, IC = 0) | IEBO | - | nA |
| Emitter-base cutoff current (VEB = 5 V, IC = 0) | IEBO | 10 | nA |
| DC current gain (IC = 100 A, VCE = 10 V) | hFE | 75 | - |
| DC current gain (IC = 1 mA, VCE = 10 V) | hFE | 100 | - |
| DC current gain (IC = 10 mA, VCE = 10 V) | hFE | 100 | - |
| DC current gain (IC = 150 mA, VCE = 10 V) | hFE | 100 | - |
| DC current gain (IC = 500 mA, VCE = 10 V) | hFE | 50 | - |
| Collector-emitter saturation voltage (IC = 150 mA, IB = 15 mA) | VCEsat | - | V |
| Collector-emitter saturation voltage (IC = 500 mA, IB = 50 mA) | VCEsat | 0.4 | V |
| Collector-emitter saturation voltage (IC = 500 mA, IB = 50 mA) | VCEsat | 1.6 | V |
| Base emitter saturation voltage (IC = 150 mA, IB = 15 mA) | VBEsat | - | V |
| Base emitter saturation voltage (IC = 500 mA, IB = 50 mA) | VBEsat | 1.3 | V |
| Base emitter saturation voltage (IC = 500 mA, IB = 50 mA) | VBEsat | 2.6 | V |
| AC Characteristics | |||
| Transition frequency (IC = 20 mA, VCE = 20 V, f = 100 MHz) | fT | 200 | MHz |
| Collector-base capacitance (VCB = 10 V, f = 1 MHz) | Ccb | - | pF |
| Collector-base capacitance (VCB = 10 V, f = 1 MHz) | Ccb | 8 | pF |
| Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz) | Ceb | - | pF |
| Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz) | Ceb | 30 | pF |
| Delay time (VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V) | td | - | ns |
| Delay time (VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V) | td | 10 | ns |
| Rise time (VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V) | tr | - | ns |
| Rise time (VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V) | tr | 40 | ns |
| Storage time (VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA) | tstg | - | ns |
| Storage time (VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA) | tstg | 80 | ns |
| Fall time (VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA) | tf | - | ns |
| Fall time (VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA) | tf | 30 | ns |
2410121733_Infineon-MMBT2907ALT1HTSA1_C151510.pdf
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