Durable HXY MOSFET 2P4M optimized for in igniters residual current circuit breakers and hair devices
Key Attributes
Model Number:
2P4M
Product Custom Attributes
Holding Current (Ih):
3mA
Current - Gate Trigger(Igt):
90uA
Voltage - On State(Vtm):
1.6V
Current - On State(It(RMS)):
2A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
20A@50Hz
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
2P4M
Package:
SOT-89
Product Description
Product Overview
The 2P4M 2A SCR series offers a high dv/dt rate and strong resistance to electromagnetic interference. They are specifically recommended for applications such as residual current circuit breakers, straight hair devices, and igniters.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Model: 2P4M
- Origin: Shenzhen, China
- Package Type: SOT-89
- Certifications: None explicitly mentioned
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Storage junction temperature range | Tstg | -40 | 150 | C | ||
| Operating junction temperature range | Tj | 125 | C | |||
| Repetitive peak off-state voltage | VDRM | (Tj=25C) | 600 | V | ||
| Repetitive peak reverse voltage | VRRM | (Tj=25C) | 600 | V | ||
| RMS on-state current | IT(RMS) | 2 | A | |||
| Non repetitive surge peak on-state current | ITSM | (full cycle, F=50Hz) | 20 | A | ||
| Gate trigger current | IGT | VD=12V, RL =100 | 0.8 | mA | ||
| Gate trigger voltage | VGT | VD=12V, RL =100 | 1.6 | V | ||
| Off-state voltage | VGD | VD=VDRM Tj=110C | 0.2 | V | ||
| Holding current | IH | IT=50mA | 0.1 | mA | ||
| Rate of rise of off-state voltage | dV/dt | VD=2/3VDRM Tj=110C RGK=1K | 20 | V/s | ||
| On-state voltage | VTM | ITM=2A | 1.6 | V | ||
| Off-state current | IDRM | VD=VDRM RGK=1k | - | mA | ||
| Reverse current | IRRM | VRRM RGK=1k | - | mA |
2508201703_HXY-MOSFET-2P4M_C50313591.pdf
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