General Purpose Switching Device HXY MOSFET BT136-800E Featuring 800V Voltage and 4A Current Rating

Key Attributes
Model Number: BT136-800E
Product Custom Attributes
Mfr. Part #:
BT136-800E
Package:
TO-126
Product Description

Product Overview

The BT136-800E is a plastic-encapsulated thyristor designed for general-purpose switching applications. It offers a blocking voltage up to 800V and an RMS on-state current of up to 4A. This product is manufactured by Shenzhen HuaXuanYang Electronics CO.,LTD.

Product Attributes

  • Brand: HUAXUANYANG ELECTRONICS
  • Origin: Shenzhen, China
  • Product ID: BT136-800E
  • Package: TO-126
  • Marking: BT136-800E

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Repetitive peak off-state voltageVDRM /VRRM800V
RMS on-state currentIT(RMS)4A
Non repetitive surge peak on-state currentITSMt = 2ms, Tj =25C40A
Average Gate Power DissipationPG(AV)0.5W
Junction TemperatureTj-40125C
Storage TemperatureTstg-40150C
Gate non-trigger voltageVGDVD= 1/2VDRM5V
On-state voltageVTMIT=4A,tp=380us1.65V
Gate trigger currentIGTT2(+), G(+) VD=12V RL=10012mA
Gate trigger voltageVGTT2(+), G(+) VD=12V RL=1002.5V
Holding currentIHVD=12V,IGT=100mA30mA
Repetitive Peak Off-State CurrentIDRM,IRRMVDRM=VRRM Tj =125C0.8mA
Rate of change of commutating voltagedV/dtTj =125C20V/us
Turn-on timetgtITM =16A ,VDM=VDRM Tj =125C2us
Critical-rate of rise of commutation current(dl/dt)cIG =0.1A,dlG/dt=5A/uS5.4A/ms
SymbolDimensions In MillimetersDimensions In Inches
A11.1000.0431.5000.059
b0.6600.0260.8600.034
b11.1700.0461.3700.054
c0.4500.0180.6000.024
D7.4000.2917.8000.307
E10.6000.41711.0000.433
e4.4800.1764.6800.184
h0.0000.0000.3000.012
L15.3000.60215.7000.618
L12.1000.0832.3000.091
P3.9000.1544.1000.161
3.0000.1183.2000.126

2508121550_HXY-MOSFET-BT136-800E_C50275364.pdf

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