Plastic envelope triac HXY MOSFET BT137-800D ideal for domestic lighting and heating control systems
Key Attributes
Model Number:
BT137-800D
Product Custom Attributes
Mfr. Part #:
BT137-800D
Package:
TO-252-2L
Product Description
Product Overview
The BT137-800D is a glass-passivated triac in a plastic envelope, designed for applications requiring high bidirectional transient and blocking voltage capability, along with excellent thermal cycling performance. Its typical applications include motor control, industrial and domestic lighting, heating, and static switching.
Product Attributes
- Brand: HUAXUANYANG (HXY)
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package Type: TO-252-2L
- Material: Plastic-Encapsulate
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit |
| VDRM /VRRM | repetitive peak off-state voltage | Tj = 125C | 800 | V |
| Tj = 125C | 800 | V | ||
| Tj = 125C | 800 | V | ||
| Tj = 125C | 800 | V | ||
| Tj = 125C | 800 | V | ||
| IGM | Peak Gate Current | - | - | A |
| VGM | Peak gate voltage | - | - | V |
| PGM | Peak gate power | - | - | W |
| Tj | Junction Temperature | -40 ~ 125 | C | |
| G(AV) | Average Gate Power Dissipation | - | 0.5 | W |
| IT(RMS) | RMS on-state current | - | - | A |
| ITSM | Non repetitive surge peak on-state current | tp=20 ms, Tj =25C | 50 | A |
| It | It for fusing | tp=16.7ms, Tj =25C | 2500 | As |
| dl/dt | Critical-rate of rise of commutation current | IG=2IGT, tr100ns, F=120Hz | - | A/s |
| dV/dt | Rate of change of commutating voltage | VDM=67%VDRM, Tj =125C | 20 | V/s |
| t gt | Turn-on time | ITM =16A, VDM=VDRM | - | s |
| Tstg | Storage Temperature | - | -40 ~ 150 | C |
| IDRM,IRRM | Repetitive Peak Off-State Current / Repetitive Peak Reverse Current | VDRM=VRRM, Tj =25C | 0.8 | mA |
| IDRM,IRRM | Repetitive Peak Off-State Current / Repetitive Peak Reverse Current | VDRM=VRRM, Tj =125C | 50 | mA |
| VGD | Gate non-trigger voltage | VD= 1/2VDRM | 0.2 | V |
| VTM | On-state voltage | IT= 6A,tp=380s | - | V |
| Tj =125C | - | V | ||
| Tj =125C | - | V | ||
| IGT | Gate trigger current | T2(+), G(+) | - | mA |
| T2(+), G(-) | - | mA | ||
| T2(-), G(-) | - | mA | ||
| VGT | Gate trigger voltage | T2(+), G(+) | - | V |
| T2(+), G(-) | - | V | ||
| T2(-), G(-) | - | V | ||
| IH | Holding current | VD=12V ,IGT=100mA | - | mA |
| (dl/dt)c | Critical-rate of rise of commutation voltage | (dl/dt)c=5.4A/ms | - | A/ms |
| dV/dt | Rate of change of commutating voltage | VDM=400V | 20 | V/s |
2508121550_HXY-MOSFET-BT137-800D_C50275361.pdf
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