switching MOSFET Jilin Sino Microelectronics JCS15N65FH 220MF with low gate charge and fast response
Key Attributes
Model Number:
JCS15N65FH-220MF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
550mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 N-channel
Output Capacitance(Coss):
350pF
Input Capacitance(Ciss):
2.6nF
Pd - Power Dissipation:
61.6W
Gate Charge(Qg):
35.2nC@10V
Mfr. Part #:
JCS15N65FH-220MF
Package:
TO-220F-3
Product Description
Product Overview
The JCS15N65H is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche testing, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rdson-Max (@Vgs=10V) () | Qg-Typ (nC) |
| JCS15N65FH-F-B | N/A | TO-220MF | 15.0 | 650 | 0.55 | 35.2 |
| JCS15N65FH-F2-B | N/A | TO-220MF-K2 | 15.0 | 650 | 0.55 | 35.2 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDSS | - | - | - | 650 | V |
| Drain Current-continuous | ID | T=25 | - | - | 15* | A |
| Drain Current-continuous | ID | T=100 | - | - | 9.5* | A |
| Gate-Source Voltage | VGSS | - | - | - | 30 | V |
| Single Pulsed Avalanche Energy | EAS | - | - | - | 1688 | mJ |
| Avalanche Current | IAR | - | - | - | 15 | A |
| Power Dissipation | PD | TC=25 | - | - | 61.6 | W |
| Operating and Storage Temperature Range | TJ,TBSTG | - | -55 | - | +150 | |
| Drain-Source Voltage | BVDSS | IB=250A,VGS=0V | 650 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V,TC=25 | - | - | 10 | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 3.0 | - | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=7.5A, 25 | - | 0.5 | 0.55 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=7.5A, 100 | - | 0.88 | 1.20 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=7.5A, 150 | - | 1.3 | 1.80 | |
| Forward Transconductance | gfs | VDS=40V,ID=7.5A | - | 11.0 | - | S |
| Input capacitance | Ciss | VDS=25V,VGS=0V,f=1.0MHz | - | 1000 | 2600 | pF |
| Output capacitance | Coss | VDS=25V,VGS=0V,f=1.0MHz | - | 50 | 350 | pF |
| Reverse transfer capacitance | Crss | VDS=25V,VGS=0V,f=1.0MHz | - | 2 | 40 | pF |
| Total Gate Charge | Qg | VDS=520V,ID=15A,VGS=10V | - | 35.2 | 75 | nC |
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | - | 15 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=15.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=15.0A, dIF/dt=100A/s | - | 853 | 1500 | ns |
| Thermal Resistance, Junction to Case | Rth(j-c) | - | - | 2.03 | 2.58 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | - | - | 39.1 | 43.7 | /W |
2411201842_Jilin-Sino-Microelectronics-JCS15N65FH-220MF_C272589.pdf
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