bidirectional switching device HXY MOSFET MAC97A6 with 600 volt blocking voltage and 0.8 amp RMS current
Key Attributes
Model Number:
MAC97A6
Product Custom Attributes
Mfr. Part #:
MAC97A6
Package:
SOT-23
Product Description
Product Overview
The MAC97A6 is a plastic-encapsulate thyristor from HUAXUANYANG ELECTRONICS. Designed for general-purpose bidirectional switching, it offers blocking voltages up to 600 V and an RMS on-state current of 0.8 A. This device is suitable for various electronic applications requiring reliable switching capabilities.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Origin: Shenzhen, China
- Product ID: MAC97A6
- Package: SOT-23
- Marking: MAC97A6
- Packing Method: Tape & Reel
Technical Specifications
| Parameter | Value | Unit | Conditions |
|---|---|---|---|
| VDRM /VRRM (Repetitive peak off-state voltage) | 600 | V | |
| IT(RMS) (RMS on-state current) | 0.8 | A | |
| IGM (Peak Gate Current) | - | A | |
| VGM (Peak gate voltage) | - | V | |
| PGM (Peak gate power) | 0.3 | W | |
| Tj (Junction Temperature) | -40 ~ 125 | C | |
| G(AV) (Average Gate Power Dissipation) | - | W | |
| ITSM (Non repetitive surge peak on-state current) | 8 | A | t =20ms Tj =25C |
| It (It for fusing) | 2 | As | t =16.7ms Tj =25C |
| dl/dt (Critical-rate of rise of commutation current) | 50 | A/us | IG=2IGT tr100ns F=120Hz |
| dV/dt (Critical-rate of rise of commutation voltage) | 10 | V/us | VD=12V ,IGT=100mA |
| Tstg (Storage Temperature) | -40 ~ 150 | C | |
| IDRM,IRRM (Repetitive Peak Off-State Current / Repetitive Peak Reverse Current) | 0.8 | mA | VDRM=VRRM T =25 j C |
| IDRM,IRRM (Repetitive Peak Off-State Current / Repetitive Peak Reverse Current) | 5 | mA | VDRM=VRRM T =125 j C |
| VGD (Gate non-trigger voltage) | 0.2 | V | VD= 1/2V DRM |
| VTM (On-state voltage) | 1.65 | V | IT=0.8A,tp=380us |
| IGT (Gate trigger current) | 0.8 | mA | T2(+), G(+) VD=12V RL=100 |
| IGT (Gate trigger current) | 0.8 | mA | T2(+), G(-) VD=12V RL=100 |
| IGT (Gate trigger current) | 0.8 | mA | T2(-), G(-) VD=12V RL=100 |
| IGT (Gate trigger current) | 0.8 | mA | T2(-), G(+) VD=12V RL=100 |
| VGT (Gate trigger voltage) | 5 | V | T2(+), G(+) VD=12V RL=100 |
| VGT (Gate trigger voltage) | 5 | V | T2(+), G(-) VD=12V RL=100 |
| VGT (Gate trigger voltage) | 5 | V | T2(-), G(-) VD=12V RL=100 |
| VGT (Gate trigger voltage) | 5 | V | T2(-), G(+) VD=12V RL=100 |
| IH (Holding current) | 30 | mA | |
| (dl/dt)c (Critical-rate of rise of commutation current) | 5.4 | A/ms | |
| (dV/dt)c (Rate of change of commutating voltage) | 20 | V/us | VDM=67%V T =125 j C DM |
| tgt (Turn-on time) | 2 | us | ITM =16A ,VDM=V DRM V =400V jT =125 C DRM(MAX) IG =0.1A,dl /dt=5A/uS |
2512231155_HXY-MOSFET-MAC97A6_C49372942.pdf
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