High Linearity Bipolar RF Transistor Silicon Germanium Type Infineon BFP650H6327 with SOT343 Package
Key Attributes
Model Number:
BFP650H6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.2V
Current - Collector Cutoff:
40nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
42GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
4V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFP650H6327
Package:
SOT-343-4
Product Description
BFP650 High Linearity Silicon Germanium Bipolar RF Transistor
The BFP650 is a high linearity silicon germanium bipolar RF transistor designed for RF and protection device applications. This datasheet provides detailed technical specifications, maximum ratings, thermal characteristics, and electrical characteristics, including DC and AC parameters, along with characteristic diagrams and simulation data. The product is supplied in a SOT343 package.
Product Attributes
- Brand: Infineon Technologies AG
- Material: Silicon Germanium Bipolar
- Package: SOT343
Technical Specifications
| Parameter | Value | Unit | Notes |
| Product Name | BFP650 | High Linearity Silicon Germanium Bipolar RF Transistor | |
| Revision | 1.1 | 2012-09-13 | |
| Maximum Collector Current (IC) | 100 | mA | |
| Maximum Collector-Emitter Voltage (VCE) | 5 | V | |
| Maximum Base Current (IB) | 10 | mA | |
| Maximum Base-Emitter Voltage (VEB) | -5 | V | Reverse |
| Maximum Power Dissipation (Ptot) | 300 | mW | at TA = 25 C |
| Transition Frequency (fT) | > 60 | GHz | at IC = 70 mA, VCE = 3 V |
| Gain (Gmax) | > 15 | dB | at f = 2.4 GHz, VCE = 3 V, IC = 70 mA |
| Noise Figure (NFmin) | < 1.0 | dB | at f = 2.4 GHz, VCE = 3 V, IC = 30 mA |
| Noise Figure (NF50) | < 1.2 | dB | at f = 2.4 GHz, VCE = 3 V, IC = 30 mA, ZS = 50 |
| 3rd Order Intercept Point (OIP3) | > 35 | dBm | at f = 2.4 GHz, VCE = 3 V, IC = 70 mA, ZS = ZL = 50 |
2410121500_Infineon-BFP650H6327_C151520.pdf
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