Low noise silicon bipolar RF transistor Infineon BFR92PE6327 suitable for broadband amplifiers up to 2 GHz
Key Attributes
Model Number:
BFR92PE6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2.5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
280mW
Transition Frequency(fT):
5GHz
Type:
NPN
Current - Collector(Ic):
45mA
Collector - Emitter Voltage VCEO:
15V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFR92PE6327
Package:
SOT-23
Product Description
Product Overview
The BFR92P is a low-noise silicon bipolar RF transistor designed for broadband amplifiers up to 2 GHz and fast non-saturated switches. It operates with collector currents ranging from 0.5 mA to 20 mA. This device is Pb-free, RoHS compliant, and has an AEC-Q101 qualification report available. It is an ESD-sensitive device and requires careful handling.
Product Attributes
- Brand: Infineon Technologies
- Package: SOT23
- Certifications: AEC-Q101
- Compliance: Pb-free (RoHS compliant)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 15 | V | |
| Collector-emitter voltage | VCES | 20 | V | |
| Collector-base voltage | VCBO | 20 | V | |
| Emitter-base voltage | VEBO | 2.5 | V | |
| Collector current | IC | 45 | mA | |
| Base current | IB | 4 | mA | |
| Total power dissipation | Ptot | 280 | mW | TS 93 C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point | RthJS | 205 | K/W | TS is measured on the collector lead at the soldering point to the pcb |
| Electrical Characteristics (DC) | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 15 | V | IC = 1 mA, IB = 0 |
| Collector-emitter cutoff current | ICES | 10 | A | VCE = 20 V, VBE = 0 |
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 10 V, IE = 0 |
| Emitter-base cutoff current | IEBO | 100 | A | VEB = 2.5 V, IC = 0 |
| DC current gain | hFE | 70 - 140 | - | IC = 15 mA, VCE = 8 V, pulse measured |
| Electrical Characteristics (AC) | ||||
| Transition frequency | fT | 3.5 - 5 | GHz | IC = 15 mA, VCE = 8 V, f = 500 MHz |
| Collector-base capacitance | Ccb | 0.39 - 0.55 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded |
| Collector emitter capacitance | Cce | 0.23 | pF | VCE = 10 V, f = 1 MHz, VBE = 0, base grounded |
| Emitter-base capacitance | Ceb | 0.64 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded |
| Minimum noise figure | NFmin | 1.4 - 2 | dB | IC = 2 mA, VCE = 6 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz |
| Power gain, maximum available | Gma | 16 - 10.5 | - | IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz / 1.8 GHz |
| Transducer gain | |S21e| | 13 - 7.5 | dB | IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz / 1.8 MHz |
2410121805_Infineon-BFR92PE6327_C273250.pdf
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