RF transistor Infineon BFP 460 H6327 for wireless applications requiring stable and flexible performance

Key Attributes
Model Number: BFP 460 H6327
Product Custom Attributes
Current - Collector Cutoff:
-
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
22GHz
Type:
NPN
Current - Collector(Ic):
50mA
Collector - Emitter Voltage VCEO:
4.5V
Mfr. Part #:
BFP 460 H6327
Package:
SOT-343-4
Product Description

Infineon RF Transistors - 7th & 8th Generation

Infineon's 7th and 8th generation RF transistors are discrete Heterojunction Bipolar Transistors (HBT) designed for complementary wireless solutions, offering robust, flexible, and reliable performance. These devices are crucial for enabling stable and reliable wireless reception and transmission across multiple bands, supporting the increasing demand for universal network availability and connectivity. They are particularly suited for low-noise amplifier (LNA) applications in WiFi connectivity, enhancing system sensitivity, extending connection distances, and improving signal-to-noise ratio (SNR). The 8th generation transistors, in particular, deliver best-in-class performance for high-throughput wireless specifications. They are ideal for applications requiring improved system sensitivity and interference immunity, such as in AP routers and mobile stations, especially when higher-order modulation schemes are employed.

Product Attributes

  • Brand: Infineon
  • Technology: Silicon-germanium (SiGe) based on B9 technology (SiGe:C B7HF for 7th gen, SiGe:C B9HF for 8th gen)
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Generation Product Family/Series Key Technology Transition Frequency (fT max) Noise Figure (NFmin) Gain (Gmax) Key Applications Advantages
7th Generation Discrete HBT (e.g., BPx740, BPx840 series) SiGe:C B7HF 44 GHz 0.45 dB (sub-GHz), 0.9 dB (5.5 GHz) 19 dB (at 10 GHz) Single- and dual-band LNA for WiFi connectivity, gain block for buffer/driver amplifiers, mixer, VCO Ease of use, improved system sensitivity, increased RF link budget and SNR, high linearity, reduced power consumption, 1.5 kV HBM ESD robustness
8th Generation Discrete HBT (e.g., BFx840x) SiGe:C B9HF 80 GHz 0.6 dB (at 5.5 GHz) Not explicitly stated, but implied to be superior to previous generations and competitors Dual- and fixed-frequency LNA for high-performance WiFi connectivity Best-in-class performance, improved system sensitivity, enhanced interference immunity, superior linearity and gain compared to competitors

2410122020_Infineon-BFP-460-H6327_C534095.pdf

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