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quality High gain broadband amplifier transistor Infineon BFR182E6327 silicon bipolar with low noise figure factory
quality High gain broadband amplifier transistor Infineon BFR182E6327 silicon bipolar with low noise figure factory

High gain broadband amplifier transistor Infineon BFR182E6327 silicon bipolar with low noise figure

Key Attributes
Model Number: BFR182E6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
8GHz
Type:
NPN
Current - Collector(Ic):
35mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BFR182E6327
Package:
SOT-23
Product Description

Product Overview

The BFR182 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It is suitable for collector currents ranging from 1 mA to 20 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This component is Pb-free (RoHS compliant) and a qualification report according to AEC-Q101 is available. It is an ESD sensitive device and requires careful handling.

Product Attributes

  • Brand: Infineon Technologies
  • Package: SOT23
  • Certifications: AEC-Q101 (Qualification report available), RoHS compliant
  • Material: Silicon Bipolar

Technical Specifications

ParameterSymbolValueUnitConditions
Maximum Ratings
Collector-emitter voltageVCEO12V
Collector-emitter voltageVCES20V
Collector-base voltageVCBO20V
Emitter-base voltageVEBO2V
Collector currentIC35mA
Base currentIB3mA
Total power dissipationPtot250mWTS 93 C
Junction temperatureTJ150C
Ambient temperatureTA-65 ... 150C
Storage temperatureTStg-65 ... 150C
Junction - soldering point Thermal ResistanceRthJS230K/W
DC Characteristics
Collector-emitter breakdown voltageV(BR)CEO12VIC = 1 mA, IB = 0
Collector-emitter cutoff currentICES100AVCE = 20 V, VBE = 0
Collector-base cutoff currentICBO100nAVCB = 10 V, IE = 0
Emitter-base cutoff currentIEBO1AVEB = 1 V, IC = 0
DC current gainhFE70 - 140-IC = 10 mA, VCE = 8 V, pulse measured
AC Characteristics
Transition frequencyfT6 - 8GHzIC = 15 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitanceCcb0.32 - 0.5pFVCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded
Collector emitter capacitanceCce0.2pFVCE = 10 V, f = 1 MHz, VBE = 0, base grounded
Emitter-base capacitanceCeb0.8pFVEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded
Minimum noise figureNFmin0.9dBIC = 3 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz
Minimum noise figureNFmin1.3dBIC = 3 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz
Power gain, maximum availableGma18-IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz
Power gain, maximum availableGma12-IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz
Transducer gain|S21e|15dBIC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz
Transducer gain|S21e|9.5dBIC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz

2410121758_Infineon-BFR182E6327_C178311.pdf

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