NPN Transistor Infineon MMBT3904LT1HTSA1 Featuring Pb Free RoHS Compliance and AEC Q101 Certification
Key Attributes
Model Number:
MMBT3904LT1HTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
330mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3904LT1HTSA1
Package:
SOT-23
Product Description
Product Overview
The SMBT3904/MMBT3904 and SMBT3904S are NPN silicon switching transistors designed for high DC current gain from 0.1 mA to 100 mA. They feature a low collector-emitter saturation voltage and are Pb-free (RoHS compliant) and qualified according to AEC Q101. The SMBT3904S variant offers two internally isolated transistors with good matching in a single package, suitable for applications requiring dual transistor functionality.
Product Attributes
- Brand: Infineon Technologies
- Certifications: AEC Q101, Pb-free (RoHS compliant)
Technical Specifications
| Parameter | Symbol | SMBT3904/MMBT3904/SMBT3904S | Unit |
|---|---|---|---|
| Maximum Ratings | |||
| Collector-emitter voltage | VCEO | 40 | V |
| Collector-base voltage | VCBO | 60 | V |
| Emitter-base voltage | VEBO | 6 | V |
| Collector current | IC | 200 | mA |
| Total power dissipation (TS 71C, SOT23) | Ptot | 330 | mW |
| Total power dissipation (TS 115C, SOT363) | 250 | ||
| Junction temperature | Tj | 150 | C |
| Storage temperature | Tstg | -65 ... 150 | C |
| Electrical Characteristics (TA = 25C) | |||
| Collector-emitter breakdown voltage (IC = 1 mA) | V(BR)CEO | 40 | V |
| Collector-base breakdown voltage (IC = 10 A) | V(BR)CBO | 60 | V |
| Emitter-base breakdown voltage (IE = 10 A) | V(BR)EBO | 6 | V |
| Collector-base cutoff current (VCB = 30 V) | ICBO | - | 50 nA |
| DC current gain (VCE = 1 V) | hFE | 40 - 300 (IC = 0.1 mA) | |
| 70 - 300 (IC = 1 mA) | |||
| 100 - 300 (IC = 10 mA) | |||
| - - 300 (IC = 50 mA) | |||
| - - 300 (IC = 100 mA) | |||
| Collector-emitter saturation voltage | VCEsat | - 0.2 V (IC = 10 mA, IB = 1 mA) | V |
| - 0.3 V (IC = 50 mA, IB = 5 mA) | |||
| Base emitter saturation voltage | VBEsat | 0.65 - 0.95 V (IC = 10 mA, IB = 1 mA) | V |
| 0.85 - 0.95 V (IC = 50 mA, IB = 5 mA) | |||
| AC Characteristics (TA = 25C) | |||
| Transition frequency (IC = 10 mA, VCE = 20 V, f = 100 MHz) | fT | 300 | MHz |
| Collector-base capacitance (VCB = 5 V, f = 1 MHz) | Ccb | - 3.5 | pF |
| Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz) | Ceb | - 8 | pF |
| Delay time (VCC = 3 V, IC = 10 mA, IB1 = 1 mA) | td | - 35 | ns |
| Rise time (VCC = 3 V, IC = 10 mA, IB1 = 1 mA) | tr | - 35 | ns |
| Storage time (VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA) | tstg | - 200 | ns |
| Fall time (VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA) | tf | - 50 | ns |
| Noise figure (IC = 100 A, VCE = 5 V, f = 1 kHz) | F | - 5 | dB |
2412111203_Infineon-MMBT3904LT1HTSA1_C3199088.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
