Surface mount silicon npn rf bipolar transistor Infineon BFP640H6327 with 42 GHz transition frequency
Key Attributes
Model Number:
BFP640H6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.2V
Current - Collector Cutoff:
40nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
42GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
50mA
Collector - Emitter Voltage VCEO:
4.1V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFP640H6327
Package:
SOT-343
Product Description
Product Overview
The BFP640 is a surface mount, high linearity silicon NPN RF bipolar transistor utilizing SiGe:C technology. It is part of Infineons sixth generation transistor family, offering a transition frequency (fT) of 42 GHz. Its high linearity characteristics at low currents make it suitable for energy-efficient designs up to 8 GHz. This device provides cost competitiveness without compromising ease of use.
Product Attributes
- Brand: Infineon
- Material: SiGe:C technology
- Certifications: Qualified for industrial applications according to JEDEC47/20/22
Technical Specifications
| Parameter | Symbol | Values | Unit | Note or test condition |
| Minimum noise figure | NFmin | 0.65 | dB | at 1.9 GHz, 3 V, 6 mA |
| High gain | Gma | 24 | dB | at 1.9 GHz, 3 V, 25 mA |
| 3rd order intercept point at output | OIP3 | 26.5 | dBm | at 1.9 GHz, 3 V, 25 mA |
| Transition frequency | fT | 42 | GHz | VCE = 3 V, IC = 30 mA, f = 2 GHz |
| Collector base capacitance | CCB | 0.08 | pF | VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded |
| Collector emitter capacitance | CCE | 0.24 | pF | VCE = 3 V, VBE = 0, f = 1 MHz, base grounded |
| Emitter base capacitance | CEB | 0.51 | pF | VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded |
| Collector emitter breakdown voltage | V(BR)CEO | 4.1 | V | IC = 1 mA, IB = 0, open base |
| Collector emitter leakage current | ICES | 1 | nA | VCE = 13 V, VBE = 0, E-B short circuited |
| Collector base leakage current | ICBO | 1 | nA | VCB = 5 V, IE = 0, open emitter |
| Emitter base leakage current | IEBO | 1 | nA | VEB = 0.5 V, IC = 0, open collector |
| DC current gain | hFE | 110 | VCE = 3 V, IC = 30 mA, pulse measured |
2410121608_Infineon-BFP640H6327_C439781.pdf
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