switching N channel MOSFET Jilin Sino Microelectronics JCS650S for power supply and UPS applications
Key Attributes
Model Number:
JCS650S
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
28A
RDS(on):
85mΩ@10V,14A
Gate Threshold Voltage (Vgs(th)):
4V
Number:
1 N-channel
Pd - Power Dissipation:
158W
Mfr. Part #:
JCS650S
Package:
TO-263
Product Description
Product Overview
The JCS650 is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic lamp ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability. This product is RoHS compliant.
Product Attributes
- Brand: JCS
- Certifications: Halogen Free, RoHS product
Technical Specifications
| Order Codes | Marking | Package | Device Weight (typ) | Main Characteristics ID | Main Characteristics VDSS | Main Characteristics Rdson-max (@Vgs=10V) | Main Characteristics Qg-typ |
| JCS650C-O-C-N-B | JCS650C | TO-220C | 2.06 g | 28.0A | 200 V | 85m | 103nC |
| JCS650F-O-F-N- B | JCS650F | TO-220MF | 2.22 g | 28.0A | 200 V | 85m | 103nC |
| JCS650S-O-S-N- A | JCS650S | TO-263 | 1.93 g | 28.0A | 200 V | 85m | 103nC |
| JCS650S-O-S-N-B | JCS650S | TO-263 | 1.93 g | 28.0A | 200 V | 85m | 103nC |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | JCS650C | JCS650S | JCS650F |
| Drain-Source Voltage | VDSS | 200 | V | ✔ | ✔ | ✔ |
| Drain Current -continuous (T=25) | ID | 28.0* | A | ✔ | ✔ | ✔ |
| Drain Current -continuous (T=100) | ID | 17.7* | A | ✔ | ✔ | ✔ |
| Drain Current -pulse (note 1) | IDM | 112* | A | ✔ | ✔ | ✔ |
| Gate-Source Voltage | VGSS | 30 | V | ✔ | ✔ | ✔ |
| Single Pulsed Avalanche Energy (note 2) | EAS | 588 | mJ | ✔ | ✔ | ✔ |
| Avalanche Current (note 1) | IAR | 28 | A | ✔ | ✔ | ✔ |
| Repetitive Avalanche Current (note 1) | EAR | 15.8 / 5.0 | mJ | ✔ | ✔ | ✔ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.5 | V/ns | ✔ | ✔ | ✔ |
| Power Dissipation (TC=25) | PD | 158 / 1.265 | W / W/ | ✔ | ✔ | ✔ |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | ✔ | ✔ | ✔ | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ✔ | ✔ | ✔ |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Units |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 200 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | ID=250A, referenced to 25 | - | 0.19 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V, VGS=0V, TC=25 | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=160V, TC=125 | - | - | 10 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=14.0A | - | 68 | 85 | m |
| Forward Transconductance | gfs | VDS = 40V , ID=14.0Anote 4 | - | 24 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 2879 | 3742 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 362 | 470 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 81 | 105 | pF |
Thermal Characteristics
| Parameter | Symbol | Value | Unit | JCS650C/S | JCS650F |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.79 / 2.48 | /W | ✔ | ✔ |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W | ✔ | ✔ |
Switching Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Units |
| Turn-On delay time | td(on) | VDD=100V,ID=28A,RG=25 VGS =10V note 45 | - | 28 | 69 | ns |
| Turn-On rise time | tr | VDD=100V,ID=28A,RG=25 VGS =10V note 45 | - | 251 | 494 | ns |
| Turn-Off delay time | td(off) | VDD=100V,ID=28A,RG=25 VGS =10V note 45 | - | 309 | 617 | ns |
| Turn-Off Fall time | tf | VDD=100V,ID=28A,RG=25 VGS =10V note 45 | - | 220 | 412 | ns |
| Total Gate Charge | Qg | VDS =160V , ID=28A VGS =10Vnote 45 | - | 103 | 136 | nC |
| Gate-Source charge | Qgs | VDS =160V , ID=28A VGS =10Vnote 45 | - | 16 | - | nC |
| Gate-Drain charge | Qgd | VDS =160V , ID=28A VGS =10Vnote 45 | - | 53 | - | nC |
Drain-Source Diode Characteristics and Maximum Ratings
| Parameter | Symbol | Tests conditions | Max | Units |
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | 28 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | 112 | A |
| Maximum Continuous Drain-Source Diode Forward Current | VSD | VGS=0V, IS=28A | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=28A dIF/dt=100A/s (note 4) | 218 | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=28A dIF/dt=100A/s (note 4) | 1.91 | C |
2411201840_Jilin-Sino-Microelectronics-JCS650S_C97368.pdf
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