general purpose NPN transistor Infineon MMBT 2222A LT1 suitable for various electronic applications
Key Attributes
Model Number:
MMBT 2222A LT1
Product Custom Attributes
Mfr. Part #:
MMBT 2222A LT1
Package:
SOT-23
Product Description
Product Overview
The MMBT2222LT1 and MMBT2222ALT1 are general-purpose NPN silicon transistors designed for various applications. They are available in Pb-Free packages and offer reliable performance with distinct voltage and current ratings.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: Pb-Free Packages Available
Technical Specifications
| Characteristic | Symbol | MMBT2222LT1 | MMBT2222ALT1 | Unit | Conditions | |
| MAXIMUM RATINGS | ||||||
| Collector - Emitter Voltage | VCEO | 30 | 40 | Vdc | ||
| Collector - Base Voltage | VCBO | 60 | 75 | Vdc | ||
| Emitter - Base Voltage | VEBO | 5.0 | 6.0 | Vdc | ||
| Collector Current - Continuous | IC | 600 | 600 | mAdc | ||
| Collector Current - Peak (Note 3) | ICM | 1100 | 1100 | mAdc | ||
| Total Device Dissipation FR-5 Board (Note 1) TA = 25C | PD | 225 | mW | |||
| Derate above 25C | 1.8 | mW/C | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | 556 | C/W | |||
| Total Device Dissipation Alumina Substrate (Note 2) TA = 25C | PD | 300 | mW | |||
| Derate above 25C | 2.4 | mW/C | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | 417 | C/W | |||
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | C | |||
| ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) | ||||||
| Collector - Emitter Breakdown Voltage | V(BR)CEO | 30 | 40 | Vdc | IC = 10 mAdc, IB = 0 | |
| Collector - Base Breakdown Voltage | V(BR)CBO | 60 | 75 | Vdc | IC = 10 Adc, IE = 0 | |
| Emitter - Base Breakdown Voltage | V(BR)EBO | 5.0 | 6.0 | Vdc | IE = 10 Adc, IC = 0 | |
| Collector Cutoff Current | ICEX | - | 10 | nAdc | MMBT2222A: VCE = 60 Vdc, VEB(off) = 3.0 Vdc | |
| Collector Cutoff Current | ICBO | - | - | Adc | MMBT2222: VCB = 50 Vdc, IE = 0 | |
| Collector Cutoff Current | ICBO | - | - | Adc | MMBT2222A: VCB = 60 Vdc, IE = 0 | |
| Collector Cutoff Current | ICBO | - | - | Adc | MMBT2222: VCB = 50 Vdc, IE = 0, TA = 125C | |
| Collector Cutoff Current | ICBO | - | - | Adc | MMBT2222A: VCB = 60 Vdc, IE = 0, TA = 125C | |
| Emitter Cutoff Current | IEBO | - | 100 | nAdc | MMBT2222A: VEB = 3.0 Vdc, IC = 0 | |
| Base Cutoff Current | IBL | - | 20 | nAdc | MMBT2222A: VCE = 60 Vdc, VEB(off) = 3.0 Vdc | |
| DC Current Gain | hFE | 35 | 50 | - | MMBT2222A: IC = 0.1 mAdc, VCE = 10 Vdc | |
| DC Current Gain | hFE | 75 | - | - | MMBT2222A: IC = 1.0 mAdc, VCE = 10 Vdc | |
| DC Current Gain | hFE | 35 | - | - | MMBT2222A: IC = 10 mAdc, VCE = 10 Vdc | |
| DC Current Gain | hFE | - | - | - | MMBT2222A: IC = 10 mAdc, VCE = 10 Vdc, TA = -55C | |
| DC Current Gain | hFE | - | - | - | MMBT2222A: IC = 150 mAdc, VCE = 10 Vdc (Note 4) | |
| DC Current Gain | hFE | - | - | - | MMBT2222A: IC = 150 mAdc, VCE = 1.0 Vdc (Note 4) | |
| DC Current Gain | hFE | - | - | - | MMBT2222A: IC = 500 mAdc, VCE = 10 Vdc (Note 4) | |
| Collector - Emitter Saturation Voltage | VCE(sat) | - | - | Vdc | MMBT2222: IC = 150 mAdc, IB = 15 mAdc | |
| Collector - Emitter Saturation Voltage | VCE(sat) | - | - | Vdc | MMBT2222A: IC = 150 mAdc, IB = 15 mAdc | |
| Collector - Emitter Saturation Voltage | VCE(sat) | - | - | Vdc | MMBT2222: IC = 500 mAdc, IB = 50 mAdc | |
| Collector - Emitter Saturation Voltage | VCE(sat) | - | - | Vdc | MMBT2222A: IC = 500 mAdc, IB = 50 mAdc | |
| Base - Emitter Saturation Voltage | VBE(sat) | - | 0.6 | Vdc | MMBT2222A: IC = 150 mAdc, IB = 15 mAdc | |
| Base - Emitter Saturation Voltage | VBE(sat) | - | - | Vdc | MMBT2222: IC = 150 mAdc, IB = 15 mAdc | |
| Base - Emitter Saturation Voltage | VBE(sat) | - | 1.3 | Vdc | MMBT2222A: IC = 500 mAdc, IB = 50 mAdc | |
| Base - Emitter Saturation Voltage | VBE(sat) | - | 1.2 | Vdc | MMBT2222: IC = 500 mAdc, IB = 50 mAdc | |
| Current - Gain - Bandwidth Product | fT | 250 | 300 | MHz | MMBT2222: IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz | |
| Current - Gain - Bandwidth Product | fT | - | - | MHz | MMBT2222A: IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz | |
| Output Capacitance | Cobo | - | 8.0 | pF | VCB = 10 Vdc, IE = 0, f = 1.0 MHz | |
| Input Capacitance | Cibo | - | 30 | pF | MMBT2222: VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz | |
| Input Capacitance | Cibo | - | 25 | pF | MMBT2222A: VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz | |
| Input Impedance | hie | 2.0 | 8.0 | k | MMBT2222A: IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | |
| Input Impedance | hie | 0.25 | 1.25 | k | MMBT2222A: IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz | |
| Voltage Feedback Ratio | hre | - | 8.0 X 10-4 | - | MMBT2222A: IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | |
| Voltage Feedback Ratio | hre | - | 4.0 X 10-4 | - | MMBT2222A: IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz | |
| Small-Signal Current Gain | hfe | 50 | 300 | - | MMBT2222A: IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | |
| Small-Signal Current Gain | hfe | 75 | 375 | - | MMBT2222A: IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz | |
| Output Admittance | hoe | 5.0 | 35 | mhos | MMBT2222A: IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | |
| Output Admittance | hoe | 25 | 200 | mhos | MMBT2222A: IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz | |
| Collector Base Time Constant | rb, Cc | - | 150 | ps | MMBT2222A: IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz | |
| Noise Figure | NF | - | 4.0 | dB | MMBT2222A: IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k , f = 1.0 kHz | |
| SWITCHING CHARACTERISTICS (MMBT2222A only) | ||||||
| Delay Time | td | - | 10 | ns | VCC = 30 Vdc, VBE(off) = -0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc | |
| Rise Time | tr | - | 25 | ns | ||
| Storage Time | ts | - | 225 | ns | VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc | |
| Fall Time | tf | - | 60 | ns | ||
2410311341_Infineon-MMBT-2222A-LT1_C538538.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
