Low noise figure RF transistor Infineon BFP196E6327HTSA1 designed for DECT PCN power amplifiers and broadband
Key Attributes
Model Number:
BFP196E6327HTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
700mW
Transition Frequency(fT):
7.5GHz
Type:
NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BFP196E6327HTSA1
Package:
SOT-143-4
Product Description
Product Overview
The BFP196 is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It is also suitable as a power amplifier for DECT and PCN systems. Key features include a high transition frequency (fT) of 7.5 GHz and a minimum noise figure (NFmin) of 1.3 dB at 900 MHz. This component is Pb-free (RoHS compliant) and has an AEC-Q101 qualification report available. It is an ESD-sensitive device requiring careful handling.
Product Attributes
- Brand: Infineon Technologies
- Package Type: SOT143
- Certifications: RoHS compliant, AEC-Q101
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 12 | V | |
| Collector-emitter voltage | VCES | 20 | V | |
| Collector-base voltage | VCBO | 20 | V | |
| Emitter-base voltage | VEBO | 2 | V | |
| Collector current | IC | 150 | mA | |
| Base current | IB | 15 | mA | |
| Total power dissipation | Ptot | 700 | mW | TS 77C |
| Junction temperature | TJ | 150 | C | |
| Ambient temperature | TA | -65 ... 150 | C | |
| Storage temperature | TStg | -65 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point | RthJS | 105 | K/W | TS is measured on the collector lead at the soldering point to the pcb |
| Electrical Characteristics | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 |
| Collector-emitter cutoff current | ICES | 100 | A | VCE = 20 V, VBE = 0 |
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 10 V, IE = 0 |
| Emitter-base cutoff current | IEBO | 1 | A | VEB = 1 V, IC = 0 |
| DC current gain | hFE | 70 - 140 | - | IC = 50 mA, VCE = 8 V, pulse measured |
| Transition frequency | fT | 5 - 7.5 | GHz | IC = 70 mA, VCE = 8 V, f = 500 MHz |
| Collector-base capacitance | Ccb | 0.83 - 1.3 | pF | VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded |
| Collector emitter capacitance | Cce | 0.35 | - | VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded |
| Emitter-base capacitance | Ceb | 3.9 | - | VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded |
| Minimum noise figure | NFmin | 1.3 - 2.3 | dB | IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz / 1.8 GHz |
| Power gain, maximum available | Gma | 16.5 - 10.5 | - | IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz / 1.8 GHz |
| Transducer gain | |S21e| | 13 - 7 | dB | IC = 50 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz / 1.8 GHz |
| Third order intercept point at output | IP3 | 32 | dBm | IC = 50 mA, VCE = 8 V, ZS = ZL = 50 , f = 0.9 GHz |
| 1dB Compression point | P-1dB | 19 | - | IC = 50 mA, VCE = 8 V, ZS = ZL = 50 , f = 0.9 GHz |
2410121928_Infineon-BFP196E6327HTSA1_C17628591.pdf
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