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quality Low noise silicon bipolar RF transistor Infineon BFP410H6327 suitable for high frequency applications factory
quality Low noise silicon bipolar RF transistor Infineon BFP410H6327 suitable for high frequency applications factory

Low noise silicon bipolar RF transistor Infineon BFP410H6327 suitable for high frequency applications

Key Attributes
Model Number: BFP410H6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.5V
Current - Collector Cutoff:
30nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
25GHz
Type:
NPN
Current - Collector(Ic):
40mA
Collector - Emitter Voltage VCEO:
5V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFP410H6327
Package:
SOT-343-4
Product Description

Product Overview

The BFP410 is a low-noise silicon bipolar RF transistor designed for high-frequency applications. It is suitable for handheld devices, high-frequency oscillators such as DROs for LNBs, and ISM band applications including Automatic Meter Reading and Sensors. This device features a high transit frequency of 25 GHz and is available in a Pb-free and halogen-free package with visible leads. A qualification report according to AEC-Q101 is available. Handle with care as it is an ESD-sensitive device.

Product Attributes

  • Brand: Infineon Technologies
  • Material: Silicon Bipolar
  • Certifications: Pb-free (RoHS compliant), halogen-free, AEC-Q101
  • Package: SOT343

Technical Specifications

Parameter Symbol Value Unit Conditions
Collector-emitter voltage VCEO 4.5 V TA = 25 C
Collector-emitter voltage VCEO 4.1 V TA = -55 C
Collector-emitter voltage VCES 13 V
Collector-base voltage VCBO 13 V
Emitter-base voltage VEBO 1.5 V
Collector current IC 40 mA
Base current IB 6 mA
Total power dissipation Ptot 150 mW TS 100 C
Junction temperature TJ 150 C
Storage temperature TStg -55 ... 150 C
Junction - soldering point thermal resistance RthJS 335 K/W
Collector-emitter breakdown voltage V(BR)CEO 4.5 V IC = 1 mA, IB = 0
Collector-emitter cutoff current ICES 1 nA VCE = 2 V, VBE = 0
Collector-emitter cutoff current ICES 30 nA VCE = 5 V, VBE = 0 , TA = 85 C
Collector-base cutoff current ICBO 1 nA VCB = 2 V, IE = 0
Collector-base cutoff current ICBO 30 nA VCB = 2 V, IE = 0
Emitter-base cutoff current IEBO 0.001 A VEB = 0.5 V, IC = 0
Emitter-base cutoff current IEBO 0.6 A VEB = 0.5 V, IC = 0
DC current gain hFE 60 - IC = 13 mA, VCE = 2 V, pulse measured
DC current gain hFE 95 - IC = 13 mA, VCE = 2 V, pulse measured
DC current gain hFE 130 - IC = 13 mA, VCE = 2 V, pulse measured
Transition frequency fT 18 GHz IC = 20 mA, VCE = 2 V, f = 2 GHz
Transition frequency fT 25 GHz IC = 20 mA, VCE = 2 V, f = 2 GHz
Collector-base capacitance Ccb 0.09 pF VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded
Collector-base capacitance Ccb 0.17 pF VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded
Collector emitter capacitance Cce 0.35 pF VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded
Emitter-base capacitance Ceb 0.45 pF VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded
Minimum noise figure NFmin 1.2 dB IC = 2 mA, VCE = 2 V, f = 2 GHz, ZS = ZSopt
Power gain, maximum stable Gms 21.5 dB IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 2 GHz
Insertion power gain |S21| 18.5 dB VCE = 2 V, IC = 20 mA, f = 2 GHz, ZS = ZL = 50
Third order intercept point at output IP3 23.5 dBm VCE = 2 V, IC = 20 mA, f = 2 GHz, ZS = ZL = 50
1dB compression point at output P-1dB 10.5 dBm IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 2 GHz

2410121927_Infineon-BFP410H6327_C138768.pdf

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