NPN Silicon AF Transistor Infineon BC817K25E6327HTSA1 with High Collector Current and RoHS Compliance
Key Attributes
Model Number:
BC817K25E6327HTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
170MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC817K25E6327HTSA1
Package:
SOT-23
Product Description
NPN Silicon AF Transistor
The BC817K/BC818K series are NPN silicon AF transistors designed for general AF applications. They offer high collector current, high current gain, and low collector-emitter saturation voltage. These transistors are Pb-free and RoHS compliant, qualified according to AEC Q101.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon
- Certifications: AEC Q101, RoHS compliant
Technical Specifications
| Type | Marking | Package | VCEO (V) | VCBO (V) | VEBO (V) | IC (mA) | ICM (mA) | IB (mA) | IBM (mA) | Ptot (mW) | Tj (C) | Tstg (C) | RthJS (K/W) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BC817K-16 | 6As | SOT23 | 45 | 50 | 5 | 500 | 1000 | 100 | 200 | 500 | 150 | -65 ... 150 | ≤ 70 |
| BC817K-16W | 6As | SOT323 | 45 | 50 | 5 | 500 | 1000 | 100 | 200 | 250 | 150 | -65 ... 150 | ≤ 80 |
| BC817K-25 | 6Bs | SOT23 | 45 | 50 | 5 | 500 | 1000 | 100 | 200 | 500 | 150 | -65 ... 150 | ≤ 70 |
| BC817K-25W | 6Bs | SOT323 | 45 | 50 | 5 | 500 | 1000 | 100 | 200 | 250 | 150 | -65 ... 150 | ≤ 80 |
| BC817K-40 | 6Cs | SOT23 | 45 | 50 | 5 | 500 | 1000 | 100 | 200 | 500 | 150 | -65 ... 150 | ≤ 70 |
| BC817K-40W | 6Cs | SOT323 | 45 | 50 | 5 | 500 | 1000 | 100 | 200 | 250 | 150 | -65 ... 150 | ≤ 80 |
| BC818K-16W | 6Es | SOT323 | 25 | 30 | 5 | 500 | 1000 | 100 | 200 | 250 | 150 | -65 ... 150 | ≤ 80 |
| BC818K-40 | 6Gs | SOT23 | 25 | 30 | 5 | 500 | 1000 | 100 | 200 | 500 | 150 | -65 ... 150 | ≤ 70 |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter breakdown voltage (BC817...) | V(BR)CEO | 45 | V |
| Collector-emitter breakdown voltage (BC818...) | V(BR)CEO | 25 | V |
| Collector-base breakdown voltage (BC817...) | V(BR)CBO | 50 | V |
| Collector-base breakdown voltage (BC818...) | V(BR)CBO | 30 | V |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V |
| Collector-base cutoff current (VCB = 25 V) | ICBO | 0.1 | µA |
| Collector-base cutoff current (VCB = 25 V, TA = 150 °C) | ICBO | 50 | µA |
| Emitter-base cutoff current (VEB = 4 V) | IEBO | 100 | nA |
| DC current gain (IC = 100 mA, VCE = 1 V, hFE-grp.16) | hFE | 100 | - |
| DC current gain (IC = 100 mA, VCE = 1 V, hFE-grp.25) | hFE | 160 | - |
| DC current gain (IC = 100 mA, VCE = 1 V, hFE-grp.40) | hFE | 250 | - |
| DC current gain (IC = 500 mA, VCE = 1 V) | hFE | 40 | - |
| Collector-emitter saturation voltage (IC = 500 mA, IB = 50 mA) | VCEsat | 0.7 | V |
| Base emitter saturation voltage (IC = 500 mA, IB = 50 mA) | VBEsat | 1.2 | V |
| Transition frequency (IC = 50 mA, VCE = 5 V, f = 100 MHz) | fT | 170 | MHz |
| Collector-base capacitance (VCB = 10 V, f = 1 MHz) | Ccb | 3 | pF |
| Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz) | Ceb | 40 | - |
2410121714_Infineon-BC817K25E6327HTSA1_C3199148.pdf
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