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quality Pb Free Silicon Variable Capacitance Diode Infineon BB 640 E6327 Suitable for VHF TV and VTR Tuners factory
quality Pb Free Silicon Variable Capacitance Diode Infineon BB 640 E6327 Suitable for VHF TV and VTR Tuners factory

Pb Free Silicon Variable Capacitance Diode Infineon BB 640 E6327 Suitable for VHF TV and VTR Tuners

Key Attributes
Model Number: BB 640 E6327
Product Custom Attributes
Capacitance Ratio:
16.6@C2V/C25V
Diode Configuration:
Independent
DC Reverse Voltage(Vr):
30V
Series Resistance (Rs):
1.15Ω
Diode Capacitance:
3.05pF@28V,1MHz
Mfr. Part #:
BB 640 E6327
Package:
SOD-323
Product Description

Product Overview

The BB640 is a Silicon Variable Capacitance Diode designed for VHF TV and VTR tuners. It features a Pb-free (RoHS compliant) package, ensuring environmental adherence. This diode offers precise capacitance control across various reverse voltages and is suitable for applications requiring stable performance in tuner circuits.

Product Attributes

  • Brand: Infineon Technologies
  • Product Type: Silicon Variable Capacitance Diode
  • Package Type: SOD323
  • Marking: red
  • Compliance: Pb-free (RoHS compliant)

Technical Specifications

Parameter Symbol Value Unit Notes
Maximum Ratings (at TA = 25C, unless otherwise specified)
Diode reverse voltage VR 30 V
Peak reverse voltage VRM 35 V (R 5k)
Forward current IF 20 mA
Operating temperature range Top -55 ... 150 C
Storage temperature Tstg -55 ... 150 C
Electrical Characteristics (at TA = 25C, unless otherwise specified)
DC Characteristics
Reverse current IR - nA VR = 30 V, min.
Reverse current IR - nA VR = 30 V, typ.
Reverse current IR 10 nA VR = 30 V, max.
Reverse current IR - nA VR = 30 V, TA = 85 C, min.
Reverse current IR - nA VR = 30 V, TA = 85 C, typ.
Reverse current IR 200 nA VR = 30 V, TA = 85 C, max.
AC Characteristics
Diode capacitance CT 62 pF VR = 1 V, f = 1 MHz, min.
Diode capacitance CT 69 pF VR = 1 V, f = 1 MHz, typ.
Diode capacitance CT 76 pF VR = 1 V, f = 1 MHz, max.
Diode capacitance CT 47.5 pF VR = 2 V, f = 1 MHz, min.
Diode capacitance CT 54.5 pF VR = 2 V, f = 1 MHz, typ.
Diode capacitance CT 61.5 pF VR = 2 V, f = 1 MHz, max.
Diode capacitance CT 2.85 pF VR = 25 V, f = 1 MHz, min.
Diode capacitance CT 3.28 pF VR = 25 V, f = 1 MHz, typ.
Diode capacitance CT 3.7 pF VR = 25 V, f = 1 MHz, max.
Diode capacitance CT 2.8 pF VR = 28 V, f = 1 MHz, min.
Diode capacitance CT 3.05 pF VR = 28 V, f = 1 MHz, typ.
Diode capacitance CT 3.3 pF VR = 28 V, f = 1 MHz, max.
Capacitance ratio CT1/CT28 19.5 - VR = 1 V, VR = 28 V, f = 1 MHz, min.
Capacitance ratio CT1/CT28 25 - VR = 1 V, VR = 28 V, f = 1 MHz, max.
Capacitance ratio CT2/CT25 15 - VR = 2 V, VR = 25 V, f = 1 MHz, min.
Capacitance ratio CT2/CT25 16.6 - VR = 2 V, VR = 25 V, f = 1 MHz, typ.
Capacitance matching CT/CT - % VR = 1 V, VR = 28 V, f = 1 MHz, typ.
Capacitance matching CT/CT 2.5 % VR = 1 V, VR = 28 V, f = 1 MHz, max. (See Application Note 047)
Series resistance rS - CT = 12 pF, f = 100 MHz, typ.
Series resistance rS 1.15 CT = 12 pF, f = 100 MHz, typ.

2411220050_Infineon-BB-640-E6327_C533692.pdf

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