Low Noise Silicon Germanium Bipolar RF Transistor Infineon BFP740E6327 for RF Communication Systems
Key Attributes
Model Number:
BFP740E6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.2V
Current - Collector Cutoff:
40nA
Pd - Power Dissipation:
160mW
Transition Frequency(fT):
44GHz
Type:
NPN
Current - Collector(Ic):
45mA
Collector - Emitter Voltage VCEO:
4V
Mfr. Part #:
BFP740E6327
Package:
SOT-343-4
Product Description
BFP740 Low Noise Silicon Germanium Bipolar RF Transistor
The BFP740 is a low noise silicon germanium bipolar RF transistor designed for various RF applications. It offers excellent performance characteristics, making it suitable for circuit designers requiring high performance in RF circuits.
Product Attributes
- Brand: Infineon Technologies AG
- Material: Silicon Germanium (SiGe)
- Package: SOT343
Technical Specifications
| Parameter | Value | Conditions | Unit |
| Product Name | BFP740 | ||
| Device Type | Low Noise RF Transistor | ||
| Technology | Silicon Germanium Bipolar (SiGe BJT) | ||
| Package Type | SOT343 | ||
| Maximum Collector Current (IC) | 15 | mA | |
| Collector-Emitter Voltage (VCE) | 3 | V | |
| Frequency (f) | 5.5 | ZS = ZL = 50 | GHz |
| Transition Frequency (fT) | Varies with IC | VCE = Parameter in V | |
| 3rd Order Intercept Point at Output (OIP3) | Varies with IC, VCE | ZS = ZL = 50 , f = 5.5 GHz | dBm |
| Compression Point at Output (OP1dB) | Varies with IC, VCE | ZS = ZL = 50 , f = 5.5 GHz | dBm |
| Collector Base Capacitance (CCB) | Varies with VCB | f = 1 MHz | |
| Maximum Power Gain (Gmax) | Varies with IC, VCE, f | ||
| Minimum Noise Figure (NFmin) | Varies with f, IC, VCE | ZS = Zopt | |
| Noise Figure at 50 Ohm (NF50) | Varies with f, IC, VCE | ZS = 50 |
2411220251_Infineon-BFP740E6327_C17577848.pdf
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