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quality Pb-free silicon tuning diode Infineon BBY5802VH6327XTSA1 designed for TCXO and VCXO frequency control factory
quality Pb-free silicon tuning diode Infineon BBY5802VH6327XTSA1 designed for TCXO and VCXO frequency control factory

Pb-free silicon tuning diode Infineon BBY5802VH6327XTSA1 designed for TCXO and VCXO frequency control

Key Attributes
Model Number: BBY5802VH6327XTSA1
Product Custom Attributes
Capacitance Ratio:
3.5@C1V/C4V
Diode Configuration:
Independent
DC Reverse Voltage(Vr):
10V
Series Resistance (Rs):
250mΩ
Diode Capacitance:
5.5pF@6V,1MHz
Mfr. Part #:
BBY5802VH6327XTSA1
Package:
SC-79-2
Product Description

Product Overview

The BBY58 series are silicon hyperabrupt tuning diodes designed for low tuning voltage operation in VCOs for mobile communications equipment and low frequency control elements like TCXOs and VCXOs. These diodes offer excellent linearity, high Q, and low series resistance. They are available in various packages and configurations, featuring very low capacitance spread and Pb-free (RoHS compliant) packaging, qualified according to AEC Q101.

Product Attributes

  • Brand: Infineon
  • Material: Silicon
  • Compliance: Pb-free (RoHS compliant)
  • Qualification: AEC Q101

Technical Specifications

Model Type Package Configuration LS (nH) Marking
BBY58-02L Tuning Diode TSLP-2-1 single, leadless 0.4 yel. B5s
BBY58-02V Tuning Diode SC79 single 0.6 88
BBY58-02W Tuning Diode SCD80 single 0.6 8
BBY58-03W Tuning Diode SOD323 single 0.6 88
BBY58-05W Tuning Diode SOT323 common anode 1.4 8
BBY58-06W Tuning Diode SOT323 common cathode 1.4 y
Parameter Symbol Value Unit
Diode reverse voltage VR 10 V
Forward current IF 20 mA
Operating temperature range Top -55 ... 150 C
Storage temperature Tstg -55 ... 150 C
Reverse current (VR = 8 V) IR - nA
Reverse current (VR = 8 V, TA = 85 C) IR 10 nA
Diode capacitance (VR = 1 V, f = 1 MHz) CT 17.5 - 19.3 pF
Diode capacitance (VR = 2 V, f = 1 MHz) CT 11.4 - 13.3 pF
Diode capacitance (VR = 3 V, f = 1 MHz) CT 7.8 - 9.3 pF
Diode capacitance (VR = 4 V, f = 1 MHz) CT 5.5 - 6.6 pF
Diode capacitance (VR = 6 V, f = 1 MHz) CT 3.8 - 5.5 pF
Capacitance ratio (VR = 1 V, VR = 3 V, f = 1 MHz) CT1/CT3 1.9 - 2.4 -
Capacitance ratio (VR = 1 V, VR = 4 V, f = 1 MHz) CT1/CT4 2.7 - 3.5 -
Capacitance ratio (VR = 4 V, VR = 6 V, f = 1 MHz) CT4/CT6 1.15 - 1.45 -
Series resistance (VR = 1 V, f = 470 MHz, BBY58-02L, -07L4) rS 0.3
Series resistance (VR = 1 V, f = 470 MHz, all other) rS 0.25
Parameter Symbol Value (min) Value (typ) Value (max) Unit
Diode capacitance (VR = 1 V, f = 1 MHz) CT 17.5 18.3 19.3 pF
Diode capacitance (VR = 2 V, f = 1 MHz) CT 11.4 12.35 13.3 pF
Diode capacitance (VR = 3 V, f = 1 MHz) CT 7.8 8.6 9.3 pF
Diode capacitance (VR = 4 V, f = 1 MHz) CT 5.5 6 6.6 pF
Diode capacitance (VR = 6 V, f = 1 MHz) CT 3.8 4.7 5.5 pF
Capacitance ratio (VR = 1 V, VR = 3 V, f = 1 MHz) CT1/CT3 1.9 2.15 2.4 -
Capacitance ratio (VR = 1 V, VR = 4 V, f = 1 MHz) CT1/CT4 2.7 3.05 3.5 -
Capacitance ratio (VR = 4 V, VR = 6 V, f = 1 MHz) CT4/CT6 1.15 1.3 1.45 -
Series resistance (VR = 1 V, f = 470 MHz) rS - - 0.25

2410121845_Infineon-BBY5802VH6327XTSA1_C3272463.pdf

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