RF Heterojunction Bipolar Transistor Infineon BFP842ESDH6327XTSA1 with ESD Protection and High Gain
Key Attributes
Model Number:
BFP842ESDH6327XTSA1
Product Custom Attributes
Current - Collector Cutoff:
400nA
Pd - Power Dissipation:
120mW
Transition Frequency(fT):
57GHz
Type:
NPN
Current - Collector(Ic):
-
Collector - Emitter Voltage VCEO:
3.25V
Operating Temperature:
-40℃~+150℃
Mfr. Part #:
BFP842ESDH6327XTSA1
Package:
SOT-343-4
Product Description
BFP842ESD SiGe:C NPN RF Bipolar Transistor
The BFP842ESD is a high-performance RF heterojunction bipolar transistor (HBT) with integrated ESD protection, designed for 2.3 - 3.5 GHz LNA applications. It offers a unique combination of high-end RF performance and robustness, including a maximum RF input power of 16 dBm and 1 kV HBM ESD hardness. With a high transition frequency (fT) of 57 GHz, it delivers excellent noise performance at high frequencies (NFmin = 0.65 dB at 3.5 GHz) and high gain (Gma = 17.5 dB at 3.5 GHz). The device is suitable for low voltage applications such as 1.2 V and 1.8 V.
Product Attributes
- Brand: Infineon
- Material: SiGe:C
- Package: SOT343
- Certifications: Qualified for industrial applications according to JEDEC47/20/22
- Marking: T9s
- Pieces per Reel: 3000
Technical Specifications
| Parameter | Symbol | Values | Unit | Note or test condition |
| Absolute Maximum Ratings (TA = 25 C unless otherwise specified) | ||||
| Collector emitter voltage | VCEO | 3.25 | V | Open base |
| Collector emitter voltage | VCES | 3.25 | V | E-B short circuited |
| Collector base voltage | VCBO | 4.1 | V | Open emitter |
| Base current | IB | 5 to 3 | mA | |
| Collector current | IC | 40 | mA | |
| RF input power | PRFin | 16 | dBm | |
| ESD stress pulse | VESD | -1 | kV | HBM, all pins, acc. to JESD22-A114 |
| Total power dissipation | Ptot | 120 | mW | TS 111 C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 to 150 | C | |
| Thermal Characteristics | ||||
| Junction - soldering point thermal resistance | RthJS | 324 | K/W | |
| DC Characteristics (TA = 25 C) | ||||
| Collector emitter breakdown voltage | V(BR)CEO | 3.25 to 3.7 | V | IC = 1 mA, IB = 0, open base |
| Collector emitter leakage current | ICES | 400 | nA | VCE = 2 V, VBE = 0, E-B short circuited |
| Collector base leakage current | ICBO | 400 | nA | VCB = 2 V, IE = 0, open emitter |
| Emitter base leakage current | IEBO | 10 | A | VEB = 0.5 V, IC = 0, open collector |
| DC current gain | hFE | 150 to 450 | VCE = 2.5 V, IC = 15 mA, pulse measured | |
| General AC Characteristics (TA = 25 C) | ||||
| Transition frequency | fT | 57 | GHz | VCE = 2.5 V, IC = 25 mA, f = 1 GHz |
| Collector base capacitance | CCB | 64 | fF | VCB = 2 V, VBE = 0, f = 1 MHz, emitter grounded |
| Collector emitter capacitance | CCE | 0.46 | pF | VCE = 2 V, VBE = 0, f = 1 MHz, base grounded |
| Emitter base capacitance | CEB | 0.44 | VEB = 0.4 V, VCB = 0, f = 1 MHz, collector grounded | |
| Frequency Dependent AC Characteristics (Measurement setup: test fixture with Bias-Ts in a 50 system, TA = 25 C) | ||||
| f = 450 MHz | VCE = 2.5 V | |||
| Maximum power gain | Gms | 29.5 | dB | IC = 15 mA |
| Minimum noise figure | NFmin | 0.4 | dB | IC = 5 mA |
| 3rd order intercept point at output | OIP3 | 22 | dBm | ZS = ZL = 50 , IC = 15 mA |
| f = 3.5 GHz | VCE = 2.5 V | |||
| Maximum power gain | Gma | 17.5 | dB | IC = 15 mA |
| Minimum noise figure | NFmin | 0.65 | dB | IC = 5 mA |
| 3rd order intercept point at output | OIP3 | 25.5 | dBm | ZS = ZL = 50 , IC = 15 mA |
2410121551_Infineon-BFP842ESDH6327XTSA1_C7425482.pdf
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