Silicon Variable Capacitance Diode Infineon BB 914 E6327 Featuring High Figure of Merit for Radio Tuners
Key Attributes
Model Number:
BB 914 E6327
Product Custom Attributes
Capacitance Ratio:
2.34@C2V/C8V
Diode Configuration:
1 Pair Common Cathode
DC Reverse Voltage(Vr):
18V
Series Resistance (Rs):
280mΩ
Diode Capacitance:
18.7pF@8V,1MHz
Mfr. Part #:
BB 914 E6327
Package:
SOT-23
Product Description
Product Overview
The BB914 is a Silicon Variable Capacitance Diode designed for FM radio tuners, offering an extended frequency band and high tuning ratio at low supply voltage, making it ideal for car radio applications. This monolithic chip features a common cathode configuration for perfect dual diode tracking, ensuring good linearity in its C-V curve and a high figure of merit. The BB914 is Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon Technologies
- Type: Silicon Variable Capacitance Diode
- Configuration: Common cathode
- Package: SOT23
- Certification: Pb-free (RoHS compliant)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Diode reverse voltage | VR | 18 | V | Maximum Ratings at TA = 25C |
| Peak reverse voltage (R 5k) | VRM | 20 | V | Maximum Ratings at TA = 25C |
| Forward current | IF | 50 | mA | Maximum Ratings at TA = 25C |
| Operating temperature range | Top | -55 ... 125 | C | Maximum Ratings |
| Storage temperature | Tstg | -55 ... 150 | C | Maximum Ratings |
| Reverse current | IR | - | nA | VR = 16 V, TA = 25C (max) |
| Reverse current | IR | - | nA | VR = 16 V, TA = 85C (max) |
| Diode capacitance | CT | 42.5 - 45 | pF | VR = 2 V, f = 1 MHz |
| Diode capacitance | CT | 17.6 - 19.75 | pF | VR = 8 V, f = 1 MHz |
| Capacitance ratio | CT2/CT8 | 2.28 - 2.42 | - | VR = 2 V, VR = 8 V, f = 1 MHz |
| Capacitance matching | CT/CT | - 1.5 | % | VR = 2 V, VR = 8 V, f = 1 MHz |
| Series resistance | rS | - 0.28 | VR = 2 V, f = 100 MHz | |
| Inductance | LS | 1.8 | nH | SOT23 package |
2410121845_Infineon-BB-914-E6327_C533697.pdf
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