Silicon bipolar RF transistor Infineon BFP 193 E6327 featuring AEC Q101 qualification for broadband amplifier
Key Attributes
Model Number:
BFP 193 E6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
580mW
Transition Frequency(fT):
8GHz
Type:
NPN
Current - Collector(Ic):
80mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFP 193 E6327
Package:
SOT-143-4
Product Description
Product Overview
The BFP193 is a low-noise silicon bipolar RF transistor designed for high-gain and linear broadband amplifiers up to 2 GHz. It offers excellent performance with a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This component is Pb-free and RoHS compliant, with qualification reports available according to AEC-Q101. It is ESD sensitive and requires careful handling.
Product Attributes
- Brand: Infineon Technologies
- Package: SOT143
- Certifications: AEC-Q101 (Qualification report available)
- Compliance: Pb-free (RoHS compliant)
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Maximum Ratings | VCEO | 12 | V | |
| VCES | 20 | V | ||
| VCBO | 20 | V | ||
| VEBO | 2 | V | ||
| IC | 80 | mA | ||
| IB | 10 | mA | ||
| Total power dissipation | Ptot | 580 | mW | TS 72C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 ... 150 | C | |
| Thermal Resistance | RthJS | 135 | K/W | Junction - soldering point |
| DC Characteristics | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 |
| ICES | - | 100 | A | VCE = 20 V, VBE = 0 |
| ICBO | - | 100 | nA | VCB = 10 V, IE = 0 |
| IEBO | - | 1 | A | VEB = 1 V, IC = 0 |
| DC current gain | hFE | 70 - 140 | - | IC = 30 mA, VCE = 8 V, pulse measured |
| AC Characteristics | fT | 6 - 8 | GHz | IC = 50 mA, VCE = 8 V, f = 500 MHz |
| Ccb | - 0.59 - 0.9 | pF | VCB = 10 V, f = 1 MHz, emitter grounded | |
| Cce | - 0.28 - | pF | VCE = 10 V, f = 1 MHz, base grounded | |
| Ceb | - 2.25 - | pF | VEB = 0.5 V, f = 1 MHz, collector grounded | |
| NFmin | - - 1 | dB | IC = 10 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz | |
| NFmin | - - 1.6 | dB | IC = 10 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz | |
| Gma | - - 18 | dB | IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz | |
| Gma | - - 12 | dB | IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz | |
| |S21e| | - - 14.5 | dB | IC = 30 mA, VCE = 8 V, ZS = ZL = 50, f = 900 MHz | |
| |S21e| | - - 8.5 | dB | IC = 30 mA, VCE = 8 V, ZS = ZL = 50, f = 1.8 GHz | |
| IP3 | - 29.5 - | dBm | IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz | |
| P-1dB | - 13 - | dBm | IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz |
2410121743_Infineon-BFP-193-E6327_C534079.pdf
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