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quality NPN Silicon Darlington Transistor Infineon BCV 27 E6327 with Complementary PNP Types BCV26 and BCV46 factory
quality NPN Silicon Darlington Transistor Infineon BCV 27 E6327 with Complementary PNP Types BCV26 and BCV46 factory

NPN Silicon Darlington Transistor Infineon BCV 27 E6327 with Complementary PNP Types BCV26 and BCV46

Key Attributes
Model Number: BCV 27 E6327
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
360mW
DC Current Gain:
4000
Transition Frequency(fT):
170MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
BCV 27 E6327
Package:
SOT-23
Product Description

Product Overview

The BCV27 and BCV47 are NPN Silicon Darlington Transistors designed for general AF applications. They offer high collector current, high current gain, and are available in Pb-free (RoHS compliant) SOT23 packages. These transistors are qualified according to AEC Q101 standards and have complementary PNP types (BCV26, BCV46).

Product Attributes

  • Brand: Infineon Technologies
  • Material: Silicon
  • Package: SOT23
  • Certifications: AEC Q101, RoHS compliant
  • Type Marking: BCV27 (FFs), BCV47 (FGs)
  • Complementary Types: BCV26, BCV46 (PNP)

Technical Specifications

ParameterSymbolBCV27BCV47Unit
Maximum Ratings
Collector-emitter voltageVCEO3060V
Collector-base voltageVCBO4080V
Emitter-base voltageVEBO10V
Collector currentIC500mA
Peak collector current, tp 10 msICM800mA
Base currentIB100mA
Peak base currentIBM200mA
Total power dissipation- TS 74 CPtot360mW
Junction temperatureTj150C
Storage temperatureTstg-65 ... 150C
Thermal Resistance
Junction - soldering pointRthJS 210K/W
DC Characteristics at TA = 25C, unless otherwise specified
Collector-emitter breakdown voltage, IC = 10 mA, IB = 0V(BR)CEO3060V
Collector-base breakdown voltage, IC = 100 A, IE = 0V(BR)CBO4080V
Emitter-base breakdown voltage, IE = 10 A, IC = 0V(BR)EBO10V
Collector-base cutoff current, VCB = 30 V, IE = 0ICBO0.1A
Collector-base cutoff current, VCB = 60 V, IE = 0ICBO0.1A
Collector-base cutoff current, VCB = 30 V, IE = 0, TA = 150 CICBO10A
Collector-base cutoff current, VCB = 60 V, IE = 0, TA = 150 CICBO10A
Emitter-base cutoff current, VEB = 4 V, IC = 0IEBO100nA
DC current gain, IC = 100 A, VCE = 1 VhFE40002000-
DC current gain, IC = 10 mA, VCE = 5 VhFE100004000-
DC current gain, IC = 100 mA, VCE = 5 VhFE2000010000-
DC current gain, IC = 0.5 A, VCE = 5 VhFE40002000-
Collector-emitter saturation voltage, IC = 100 mA, IB = 0.1 mAVCEsat1V
Base emitter saturation voltage, IC = 100 mA, IB = 0.1 mAVBEsat1.5V
AC Characteristics at TA = 25C, unless otherwise specified
Transition frequency, IC = 50 mA, VCE = 5 V, f = 100 MHzfT170MHz
Collector-base capacitance, VCB = 10 V, f = 1 MHzCcb3pF

2411220125_Infineon-BCV-27-E6327_C533917.pdf

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