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quality Silicon digital transistor Infineon BCR 112 E6327 featuring AEC Q101 certification and RoHS compliance factory
quality Silicon digital transistor Infineon BCR 112 E6327 featuring AEC Q101 certification and RoHS compliance factory

Silicon digital transistor Infineon BCR 112 E6327 featuring AEC Q101 certification and RoHS compliance

Key Attributes
Model Number: BCR 112 E6327
Product Custom Attributes
Input Resistor:
6.2kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
BCR 112 E6327
Package:
SOT-23
Product Description

Product Overview

The BCR112 is an NPN silicon digital transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=4.7k, R2=4.7k) and is Pb-free and RoHS compliant, qualified according to AEC Q101. Available in SOT23 and SOT323 packages.

Product Attributes

  • Brand: Infineon Technologies
  • Certifications: AEC Q101, RoHS compliant
  • Material: Silicon
  • Package Types: SOT23, SOT323

Technical Specifications

ParameterSymbolBCR112/BCR112WUnitNotes
Collector-emitter voltageVCEO50V
Collector-base voltageVCBO50V
Input forward voltageVi(fwd)30V
Input reverse voltageVi(rev)10V
Collector currentIC100mA
Total power dissipation (BCR112, TS 102C)Ptot200mW
Total power dissipation (BCR112W, TS 124C)Ptot250mW
Junction temperatureTj150C
Storage temperatureTstg-65 ... 150C
Junction - soldering point thermal resistance (BCR112)RthJS 240K/W1)
Junction - soldering point thermal resistance (BCR112W)RthJS 105K/W1)
Collector-emitter breakdown voltage (IC = 100 A, IB = 0)V(BR)CEO50V
Collector-base breakdown voltage (IC = 10 A, IE = 0)V(BR)CBO50V
Collector-base cutoff current (VCB = 40 V, IE = 0)ICBO-100nA
Emitter-base cutoff current (VEB = 10 V, IC = 0)IEBO-1.61mA
DC current gain (IC = 5 mA, VCE = 5 V)hFE20-1)
Collector-emitter saturation voltage (IC = 10 mA, IB = 0.5 mA)VCEsat-0.3V1)
Input off voltage (IC = 100 A, VCE = 5 V)Vi(off)0.81.5V
Input on voltage (IC = 2 mA, VCE = 0.3 V)Vi(on)12.5V
Input resistor R1R13.26.2k
Resistor ratio R1/R2R1/R20.91.1-
Transition frequency (IC = 10 mA, VCE = 5 V, f = 100 MHz)fT-140MHz
Collector-base capacitance (VCB = 10 V, f = 1 MHz)Ccb-3pF

1) Pulse test: t < 300s; D < 2%


2410121717_Infineon-BCR-112-E6327_C533813.pdf

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