High speed trenchstop igbt with low gate charge and low emi Infineon IKW40N120CS6 1200 volt 40 ampere device
Key Attributes
Model Number:
IKW40N120CS6
Product Custom Attributes
Td(off):
315ns
Pd - Power Dissipation:
500W
Td(on):
27ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
-
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.15V@15V,40A
Gate Charge(Qg):
285nC
Operating Temperature:
-40℃~+175℃@(Tj)
Reverse Recovery Time(trr):
400ns
Switching Energy(Eoff):
1.55mJ
Turn-On Energy (Eon):
2.55mJ
Mfr. Part #:
IKW40N120CS6
Package:
TO-247-3
Product Description
Product Overview
The Infineon IKW40N120CS6 is a sixth-generation, high-speed soft-switching TRENCHSTOPTM IGBT 6, featuring Trench and Fieldstop technology. It offers high efficiency in both hard switching and resonant topologies, easy paralleling due to a positive temperature coefficient in VCEsat, low EMI, and low Gate Charge (Qg). It is copacked with a soft and fast recovery anti-parallel diode. The device is qualified for industrial applications according to JEDEC standards.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM IGBT 6
- Certifications: RoHS compliant, Pb-free lead plating
- Product Validation: Qualified for industrial applications according to JEDEC47/20/22
Technical Specifications
| Type | VCE | IC | VCEsat, Tvj=25C | Tvjmax | Marking | Package |
|---|---|---|---|---|---|---|
| IKW40N120CS6 | 1200V | 40A | 1.85V | 175C | K40MCS6 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Collector-emitter voltage | VCE | Tvj 25C | 1200 | V |
| DC collector current | IC | Tc = 25C | 80.0 | A |
| DC collector current | IC | Tc = 100C | 40.0 | A |
| Pulsed collector current | ICpuls | tp limited by Tvjmax | 160.0 | A |
| Turn off safe operating area | - | VCE 1200V, Tvj 175C | -160.0 | A |
| Diode forward current | IF | Tc = 25C | 80.0 | A |
| Diode forward current | IF | Tc = 100C | 40.0 | A |
| Diode pulsed current | IFpuls | tp limited by Tvjmax | 160.0 | A |
| Gate-emitter voltage | VGE | - | 20 | V |
| Transient Gate-emitter voltage | VGE | tp 0.5s, D < 0.001 | 25 | V |
| Short circuit withstand time | tSC | VGE = 15.0V, VCC 500V, Tvj = 150C | 3 | s |
| Power dissipation | Ptot | Tc = 25C | 500.0 | W |
| Power dissipation | Ptot | Tc = 100C | 250.0 | W |
| Operating junction temperature | Tvj | - | -40...+175 | C |
| Storage temperature | Tstg | - | -55...+150 | C |
| Soldering temperature | - | wave soldering 1.6mm from case for 10s | 260 | C |
| Mounting torque | M | - | 0.6 | Nm |
| IGBT thermal resistance, junction - case | Rth(j-c) | - | 0.30 | K/W |
| Diode thermal resistance, junction - case | Rth(j-c) | - | 0.78 | K/W |
| Thermal resistance junction - ambient | Rth(j-a) | - | 40 | K/W |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 40.0A, Tvj = 25C | 1.85 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 40.0A, Tvj = 125C | 2.15 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 40.0A, Tvj = 175C | 2.25 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 40.0A, Tvj = 25C | 2.20 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 40.0A, Tvj = 175C | 2.55 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 1.90mA, VCE = VGE | 5.1...6.3 | V |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V, Tvj = 25C | 1600 | A |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V, Tvj = 175C | 850 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 600 | nA |
| Transconductance | gfs | VCE = 20V, IC = 40.0A | 32.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 2700 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 185 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 120 | pF |
| Gate charge | QG | VCC = 960V, IC = 40.0A, VGE = 15V | 285.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 9.0 | 27 | ns |
| Rise time | tr | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 9.0 | 39 | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 9.0 | 315 | ns |
| Fall time | tf | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 9.0 | 27 | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 9.0 | 2.55 | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 9.0 | 1.55 | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 9.0 | 4.10 | mJ |
| Diode reverse recovery time | trr | Tvj = 25C, VR = 600V, IF = 40.0A, diF/dt = 700A/s | 400 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C, VR = 600V, IF = 40.0A, diF/dt = 700A/s | 2.65 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C, VR = 600V, IF = 40.0A, diF/dt = 700A/s | 18.0 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 25C, VR = 600V, IF = 40.0A, diF/dt = 700A/s | -65 | A/s |
| Turn-on delay time | td(on) | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 9.0 | 27 | ns |
| Rise time | tr | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 9.0 | 38 | ns |
| Turn-off delay time | td(off) | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 9.0 | 390 | ns |
| Fall time | tf | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 9.0 | 55 | ns |
| Turn-on energy | Eon | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 9.0 | 3.50 | mJ |
| Turn-off energy | Eoff | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 9.0 | 2.95 | mJ |
| Total switching energy | Ets | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 9.0 | 6.45 | mJ |
| Diode reverse recovery time | trr | Tvj = 175C, VR = 600V, IF = 40.0A, diF/dt = 800A/s | 720 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 175C, VR = 600V, IF = 40.0A, diF/dt = 800A/s | 6.40 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 175C, VR = 600V, IF = 40.0A, diF/dt = 800A/s | 27.0 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 175C, VR = 600V, IF = 40.0A, diF/dt = 800A/s | -70 | A/s |
Applications
Industrial UPS, Charger, Energy storage, Three-level Solar String Inverter, Welding.
2410121813_Infineon-IKW40N120CS6_C454252.pdf
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