Power semiconductor device Infineon IKW75N65ES5 featuring trenchstop 5 technology and rapid 1 diode
Key Attributes
Model Number:
IKW75N65ES5
Product Custom Attributes
Td(off):
144ns
Pd - Power Dissipation:
395W
Td(on):
40ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
17pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.75mA
Gate Charge(Qg):
164nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
85ns
Switching Energy(Eoff):
950uJ
Turn-On Energy (Eon):
2.4mJ
Input Capacitance(Cies):
4.5nF
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
130pF
Mfr. Part #:
IKW75N65ES5
Package:
TO-247-3
Product Description
Product Overview
The Infineon TRENCHSTOPTM 5 IKW75N65ES5 is a high-speed, soft-switching IGBT designed for hard and soft switching applications. It features S5 technology for smooth switching, a very low VCEsat of 1.42V at nominal current, and a 650V breakdown voltage. This IGBT is copacked with a full current-rated RAPID 1 fast and soft antiparallel diode, offering a plug-and-play replacement for previous generation IGBTs. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5
- Diode: RAPID 1
- Compliance: RoHS compliant, Pb-free lead plating
Technical Specifications
| Type | VCE | IC (TC=25C) | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IKW75N65ES5 | 650V | 80.0A | 1.42V | 175C | K75EES5 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 75.0A, Tvj = 25C | 1.42 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 75.0A, Tvj = 25C | 1.50 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.75mA, VCE = VGE | 3.2 - 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | 3000 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 75.0A | 100.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 4500 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 130 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 17 | pF |
| Gate charge | QG | VCC = 520V, IC = 75.0A, VGE = 15V | 164.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Parameter | Symbol | Conditions | Value | Unit |
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 18.0, L = 30nH | 40 | ns |
| Rise time | tr | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 18.0, L = 30nH | 46 | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 5.6, L = 30nH | 144 | ns |
| Fall time | tf | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 5.6, L = 30nH | 41 | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 18.0, L = 30nH | 2.40 | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 5.6, L = 30nH | 0.95 | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 18.0, L = 30nH | 3.35 | mJ |
| Diode reverse recovery time | trr | Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1230A/s | 85 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1230A/s | 1.80 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1230A/s | 31.0 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1230A/s | -2170 | A/s |
2410121742_Infineon-IKW75N65ES5_C454250.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
