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quality Powerful 62mm C Series IGBT Module Infineon FF400R17KE4 with Trench Fieldstop IGBT4 Technology factory
quality Powerful 62mm C Series IGBT Module Infineon FF400R17KE4 with Trench Fieldstop IGBT4 Technology factory

Powerful 62mm C Series IGBT Module Infineon FF400R17KE4 with Trench Fieldstop IGBT4 Technology

Key Attributes
Model Number: FF400R17KE4
Product Custom Attributes
Mfr. Part #:
FF400R17KE4
Product Description

Product Overview

The FF400R17KE4 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode technology. It offers an extended operating temperature, low VCEsat with a positive temperature coefficient, and high robustness, making it suitable for high-power converters, motor drives, UPS systems, and wind turbines. The module boasts excellent electrical and mechanical features, including high insulation strength, large creepage and clearance distances, and an isolated base plate.

Product Attributes

  • Module Label Code: DMX
  • Barcode Code: Code 128
  • Material of module baseplate: Cu
  • Internal isolation: Basic insulation (class 1, IEC 61140)
  • Material: Al2O3
  • Comparative tracking index (CTI): > 400
  • Weight: 340 g

Technical Specifications

ParameterValueUnitNotes
IGBT, Inverter
Collector-emitter voltage (VCES)1700VTvj = 25C
Continuous DC collector current (IC nom)400ATC = 95C, Tvj max = 175C
Repetitive peak collector current (ICRM)800AtP = 1 ms
Gate-emitter peak voltage (VGES)+/-20V
Collector-emitter saturation voltage (VCE sat)1.95 - 2.45VIC = 400 A, VGE = 15 V, Tvj = 25C - 150C
Gate threshold voltage (VGEth)5.35 - 6.25VIC = 16.0 mA, VCE = VGE, Tvj = 25C
Gate charge (QG)4.10CVGE = -15 V ... +15 V
Internal gate resistor (RGint)1.9Tvj = 25C
Input capacitance (Cies)36.0nFf = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Reverse transfer capacitance (Cres)1.15nFf = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Collector-emitter cut-off current (ICES)1.0mAVCE = 1700 V, VGE = 0 V, Tvj = 25C
Gate-emitter leakage current (IGES)400nAVCE = 0 V, VGE = 20 V, Tvj = 25C
Turn-on delay time (td on)0.24 - 0.27sIC = 400 A, VCE = 900 V, VGE = 15 V, RGon = 0.82 , Tvj = 25C - 150C
Rise time (tr)0.04 - 0.05sIC = 400 A, VCE = 900 V, VGE = 15 V, RGon = 0.82 , Tvj = 25C - 150C
Turn-off delay time (td off)0.50 - 0.68sIC = 400 A, VCE = 900 V, VGE = 15 V, RGoff = 0.82 , Tvj = 25C - 150C
Fall time (tf)0.09 - 0.17sIC = 400 A, VCE = 900 V, VGE = 15 V, RGoff = 0.82 , Tvj = 25C - 150C
Turn-on energy loss per pulse (Eon)89.0 - 140mJIC = 400 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, di/dt = 8000 A/s, RGon = 0.82 , Tvj = 25C - 150C
Turn-off energy loss per pulse (Eoff)73.0 - 130mJIC = 400 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, du/dt = 3200 V/s, RGoff = 0.82 , Tvj = 25C - 150C
Short circuit data (ISC)1800AVGE 15 V, VCC = 1000 V, Tvj = 150C, tP 10 s
Thermal resistance, junction to case (RthJC)0.0632K/Wper IGBT
Thermal resistance, case to heatsink (RthCH)0.0271K/Wper IGBT, Paste = 1 W/(mK)
Operating temperature (Tvj op)-40 - 150C
Diode, Inverter
Repetitive peak reverse voltage (VRRM)1700VTvj = 25C
Continuous DC forward current (IF)400A
Repetitive peak forward current (IFRM)800AtP = 1 ms
It value33000 - 28500AsVR = 0 V, tP = 10 ms, Tvj = 125C - 150C
Forward voltage (VF)1.80 - 2.20VIF = 400 A, VGE = 0 V, Tvj = 25C - 150C
Peak reverse recovery current (IRM)605 - 640AIF = 400 A, - diF/dt = 8000 A/s, VR = 900 V, VGE = -15 V, Tvj = 25C - 150C
Recovered charge (Qr)105 - 190CIF = 400 A, - diF/dt = 8000 A/s, VR = 900 V, VGE = -15 V, Tvj = 25C - 150C
Reverse recovery energy (Erec)55.5 - 110mJIF = 400 A, - diF/dt = 8000 A/s, VR = 900 V, VGE = -15 V, Tvj = 25C - 150C
Thermal resistance, junction to case (RthJC)0.106K/Wper diode
Thermal resistance, case to heatsink (RthCH)0.0260K/Wper diode, Paste = 1 W/(mK)
Operating temperature (Tvj op)-40 - 150C
Module
Isolation test voltage (VISOL)4.0kVRMS, f = 50 Hz, t = 1 min.
Creepage distance (terminal to heatsink)29.0mm
Creepage distance (terminal to terminal)23.0mm
Clearance (terminal to heatsink)23.0mm
Clearance (terminal to terminal)11.0mm
Stray inductance module (LsCE)20nH
Module lead resistance (RCC'+EE')0.41mTC = 25C, per switch
Storage temperature (Tstg)-40 - 125C
Mounting torque for module mounting (Screw M6)3.00 - 6.00NmMounting according to valid application note
Terminal connection torque (Screw M6)2.5 - 5.0NmMounting according to valid application note

2411192312_Infineon-FF400R17KE4_C541058.pdf

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