IGBT module Infineon IKP30N65H5 featuring RAPID 1 diode and TRENCHSTOP 5 technology for power control
Key Attributes
Model Number:
IKP30N65H5
Product Custom Attributes
Td(off):
177ns
Pd - Power Dissipation:
188W
Td(on):
19ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
7pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.8V@0.3mA
Gate Charge(Qg):
70nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
51ns
Switching Energy(Eoff):
100uJ
Turn-On Energy (Eon):
280uJ
Input Capacitance(Cies):
1.8nF
Pulsed Current- Forward(Ifm):
90A
Output Capacitance(Coes):
45pF
Mfr. Part #:
IKP30N65H5
Package:
TO-220-3
Product Description
IGBT High Speed 5 with RAPID 1 Diode - IKP30N65H5
The IKP30N65H5 is a high-speed 5th generation IGBT from Infineon, built on TRENCHSTOPTM 5 technology and copacked with a RAPID 1 fast and soft antiparallel diode. This DuoPack offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. It features a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175C. The product is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5
- Diode Type: RAPID 1
- Certifications: JEDEC qualified, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
|---|---|---|---|---|---|---|
| IKP30N65H5 | 650V | 30A | 1.65V | 175C | K30EH5 | PG-TO220-3 |
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Maximum Ratings | ||||
| Collector-emitter voltage | VCE | Tvj 25C | 650 | V |
| DC collector current, limited by Tvjmax | IC | TC = 25C | 55.0 | A |
| DC collector current, limited by Tvjmax | IC | TC = 100C | 35.0 | A |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | - | 90.0 | A |
| Diode forward current, limited by Tvjmax | IF | TC = 25C | 36.0 | A |
| Diode forward current, limited by Tvjmax | IF | TC = 100C | 21.0 | A |
| Diode pulsed current, tp limited by Tvjmax | IFpuls | - | 90.0 | A |
| Gate-emitter voltage | VGE | - | 20 | V |
| Transient Gate-emitter voltage | - | tp 10s, D < 0.010 | 30 | V |
| Power dissipation | Ptot | TC = 25C | 188.0 | W |
| Power dissipation | Ptot | TC = 100C | 93.0 | W |
| Operating junction temperature | Tvj | - | -40...+175 | C |
| Storage temperature | Tstg | - | -55...+150 | C |
| Thermal Resistance | ||||
| IGBT thermal resistance, junction - case | Rth(j-c) | - | 0.80 | K/W |
| Diode thermal resistance, junction - case | Rth(j-c) | - | 1.80 | K/W |
| Thermal resistance junction - ambient | Rth(j-a) | - | 62 | K/W |
| Electrical Characteristics (at Tvj = 25C, unless otherwise specified) | ||||
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 25C | 1.65 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 125C | 1.85 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 175C | 2.10 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 15.0A, Tvj = 25C | 1.35 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 15.0A, Tvj = 125C | 1.30 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 15.0A, Tvj = 175C | 1.80 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.30mA, VCE = VGE | 3.2 - 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | 40.0 | A |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 175C | 4000.0 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 30.0A | 39.5 | S |
| Dynamic Characteristic | ||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 1800 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 45 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 7 | pF |
| Gate charge | QG | VCC = 520V, IC = 30.0A, VGE = 15V | 70.0 | nC |
| Internal emitter inductance | LE | measured 5mm (0.197 in.) from case | 7.0 | nH |
| Switching Characteristic, Inductive Load (Tvj = 25C) | ||||
| Turn-on delay time | td(on) | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 19 | ns |
| Rise time | tr | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 9 | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 177 | ns |
| Fall time | tf | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 14 | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.28 | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.10 | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.38 | mJ |
| Turn-on delay time | td(on) | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 18 | ns |
| Rise time | tr | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 4 | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 180 | ns |
| Fall time | tf | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 22 | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.09 | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.03 | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.12 | mJ |
| Diode Characteristic (at Tvj = 25C) | ||||
| Diode reverse recovery time | trr | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | 51 | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | 0.41 | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | 14.3 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | -403 | A/s |
| Diode reverse recovery time | trr | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | 28 | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | 0.21 | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | 12.3 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | -930 | A/s |
| Switching Characteristic, Inductive Load (Tvj = 150C) | ||||
| Turn-on delay time | td(on) | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 18 | ns |
| Rise time | tr | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 10 | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 208 | ns |
| Fall time | tf | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 16 | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.41 | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.14 | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.55 | mJ |
| Turn-on delay time | td(on) | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 16 | ns |
| Rise time | tr | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 5 | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 228 | ns |
| Fall time | tf | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 27 | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.15 | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.05 | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.20 | mJ |
| Diode Characteristic (at Tvj = 150C) | ||||
| Diode reverse recovery time | trr | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | 81 | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | 0.86 | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | 19.6 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | -310 | A/s |
| Diode reverse recovery time | trr | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | 50 | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | 0.48 | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | 18.0 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | -560 | A/s |
Applications
- Solar converters
- Uninterruptible power supplies (UPS)
- Welding converters
- Mid to high range switching frequency converters
2410121815_Infineon-IKP30N65H5_C536198.pdf
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