Industrial Power Module Infineon FF900R12ME7B11 with EconoDUAL3 Packaging and TRENCHSTOP IGBT7 Technology
Key Attributes
Model Number:
FF900R12ME7B11
Product Custom Attributes
Td(off):
550ns
Pd - Power Dissipation:
20mW
Td(on):
410ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.72nF
Input Capacitance(Cies):
122nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
1.8V@15V,900A
Operating Temperature:
-40℃~+175℃@(Tj)
Pulsed Current- Forward(Ifm):
1800A
Switching Energy(Eoff):
89mJ
Turn-On Energy (Eon):
89mJ
Mfr. Part #:
FF900R12ME7B11
Package:
Screw Terminals
Product Description
EconoDUAL3 Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode and NTC
The EconoDUAL3 module features TRENCHSTOP IGBT7 and Emitter Controlled 7 diode technology, offering high power density and an integrated temperature sensor. This module is designed for high-performance applications including motor drives, servo drives, UPS systems, and hybrid commercial agriculture vehicles. Its key advantages include Trenchstop IGBT7 for enhanced performance and VCEsat with a positive temperature coefficient, along with a PressFIT connection technology for efficient assembly.
Product Attributes
- Brand: Infineon
- Module Type: EconoDUAL3
- IGBT Technology: TRENCHSTOP IGBT7
- Diode Technology: Emitter Controlled 7
- Integrated Sensor: NTC
- Connection Technology: PressFIT
- Base Plate Material: Copper (Cu)
- Internal Isolation Material: Al2O3
Technical Specifications
| Parameter | Value | Unit | Conditions |
| IGBT, Inverter | |||
| Collector-emitter voltage (VCES) | 1200 | V | Tvj = 25C |
| Continuous DC collector current (ICDC) | 900 | A | TC = 90C, Tvj max = 175C |
| Repetitive peak collector current (ICRM) | 1800 | A | tP = 1 ms |
| Gate-emitter peak voltage (VGES) | +/-20 | V | |
| Collector-emitter saturation voltage (VCEsat) | 1.50 - 1.80 | V | IC = 900 A, VGE = 15 V, Tvj = 25C - 175C |
| Gate threshold voltage (VGEth) | 5.15 - 6.45 | V | IC = 18.0 mA, VCE = VGE, Tvj = 25C |
| Gate charge (QG) | 14.3 | C | VGE = -15 / 15 V, VCE = 600 V |
| Input capacitance (Cies) | 122 | nF | f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Reverse transfer capacitance (Cres) | 0.72 | nF | f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Collector-emitter cut-off current (ICES) | 0.1 | mA | VCE = 1200 V, VGE = 0 V, Tvj = 25C |
| Gate-emitter leakage current (IGES) | 100 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C |
| Turn-on delay time (td on) | 0.41 - 0.49 | s | IC = 900 A, VCE = 600 V, VGE = -15 / 15 V, RGon = 0.51 , Tvj = 25C - 175C |
| Rise time (tr) | 0.10 - 0.12 | s | IC = 900 A, VCE = 600 V, VGE = -15 / 15 V, RGon = 0.51 , Tvj = 25C - 175C |
| Turn-off delay time (td off) | 0.55 - 0.69 | s | IC = 900 A, VCE = 600 V, VGE = -15 / 15 V, RGoff = 0.51 , Tvj = 25C - 175C |
| Fall time (tf) | 0.11 - 0.33 | s | IC = 900 A, VCE = 600 V, VGE = -15 / 15 V, RGoff = 0.51 , Tvj = 25C - 175C |
| Turn-on energy loss per pulse (Eon) | 89.0 - 170 | mJ | IC = 900 A, VCE = 600 V, L = 25 nH, di/dt = 6200 A/s, VGE = -15 / 15 V, RGon = 0.51 , Tvj = 25C - 175C |
| Turn-off energy loss per pulse (Eoff) | 89.0 - 158 | mJ | IC = 900 A, VCE = 600 V, L = 25 nH, du/dt = 3000 V/s, VGE = -15 / 15 V, RGoff = 0.51 , Tvj = 25C - 175C |
| Short circuit current (ISC) | 3200 - 3000 | A | VGE 15 V, VCC = 800 V, Tvj = 150C - 175C |
| Thermal resistance, junction to case (RthJC) | 0.0452 | K/W | per IGBT |
| Thermal resistance, case to heatsink (RthCH) | 0.0269 | K/W | per IGBT |
| Operating temperature (Tvj op) | -40 - 175 | C | |
| Diode, Inverter | |||
| Repetitive peak reverse voltage (VRRM) | 1200 | V | Tvj = 25C |
| Continuous DC forward current (IF) | 900 | A | |
| Repetitive peak forward current (IFRM) | 1800 | A | tP = 1 ms |
| It - value | 35000 - 30000 | As | VR = 0 V, tP = 10 ms, Tvj = 125C - 175C |
| Forward voltage (VF) | 1.65 - 2.05 | V | IF = 900 A, Tvj = 25C - 175C |
| Peak reverse recovery current (IRM) | 389 - 578 | A | IF = 900 A, - diF/dt = 6200 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 175C |
| Recovered charge (Qr) | 65.0 - 171 | C | IF = 900 A, - diF/dt = 6200 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 175C |
| Reverse recovery energy (Erec) | 29.0 - 68.0 | mJ | IF = 900 A, - diF/dt = 6200 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 175C |
| Thermal resistance, junction to case (RthJC) | 0.0868 | K/W | per Diode |
| Thermal resistance, case to heatsink (RthCH) | 0.0342 | K/W | per Diode |
| Operating temperature (Tvj op) | -40 - 175 | C | |
| NTC-Thermistor | |||
| Rated resistance (R25) | 5.00 | k | TNTC = 25C |
| Deviation of R100 (R/R) | -5 - 5 | % | TNTC = 100C, R100 = 493 |
| B-value (B25/50) | 3375 | K | |
| B-value (B25/80) | 3411 | K | |
| B-value (B25/100) | 3433 | K | |
| Module | |||
| Isolation test voltage (VISOL) | 3.4 | kV | RMS, f = 50 Hz, t = 1 min |
| Creepage distance (terminal to heatsink) | 15.0 | mm | |
| Clearance (terminal to heatsink) | 12.5 | mm | |
| Comparative tracking index (CTI) | > 200 | ||
| Stray inductance module (LsCE) | 20 | nH | |
| Module lead resistance (RCC'+EE') | 0.80 | m | TC = 25C, per switch |
| Storage temperature (Tstg) | -40 - 125 | C | |
| Mounting torque for module mounting (Screw M5) | 3.00 - 6.00 | Nm | |
| Terminal connection torque (Screw M6) | 3.0 - 6.0 | Nm | |
| Weight (G) | 345 | g | |
2410311206_Infineon-FF900R12ME7B11_C3190352.pdf
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