Pb-free silicon tuning diode Infineon BBY55-02WH6327 designed for low voltage operation in VCO circuits
Key Attributes
Model Number:
BBY55-02WH6327
Product Custom Attributes
Capacitance Ratio:
2.5@C2V/C10V
Diode Configuration:
Independent
DC Reverse Voltage(Vr):
16V
Diode Capacitance:
6.5pF@10V,1MHz
Mfr. Part #:
BBY55-02WH6327
Package:
SCD80-2
Product Description
Product Overview
The BBY55 series are silicon hyperabrupt tuning diodes designed for low tuning voltage operation in VCOs for mobile communications equipment. These diodes offer excellent linearity, high Q, and low series resistance, along with a very low capacitance spread. They are Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon
- Compliance: Pb-free (RoHS compliant)
Technical Specifications
| Model | Type | Package | LS (nH) | Marking |
|---|---|---|---|---|
| BBY55-02V | single | SC79 | 0.6 | 77 white |
| BBY55-02W | single | SCD80 | 0.6 | 7 |
| BBY55-03W | single | SOD323 | 1.8 | 7 |
| Parameter | Symbol | Value | Unit | Condition | |
|---|---|---|---|---|---|
| Diode reverse voltage | VR | 16 | V | TA = 25C | |
| Forward current | IF | 20 | mA | TA = 25C | |
| Operating temperature range | Top | -55 ... 150 | C | ||
| Storage temperature | Tstg | -55 ... 150 | C | ||
| Reverse current | IR | - | nA | VR = 15 V, TA = 25C | |
| Reverse current | IR | - | 100 | nA | VR = 15 V, TA = 85C |
| Diode capacitance | CT | 17.5 - 19.6 | pF | VR = 1 V, f = 1 MHz | |
| Diode capacitance | CT | 14 - 16 | pF | VR = 2 V, f = 1 MHz | |
| Diode capacitance | CT | 11.6 - 13.6 | pF | VR = 3 V, f = 1 MHz | |
| Diode capacitance | CT | 10 - 12 | pF | VR = 4 V, f = 1 MHz | |
| Diode capacitance | CT | 5.5 - 6.5 | pF | VR = 10 V, f = 1 MHz | |
| Capacitance ratio | CT2/CT10 | 2 - 3 | VR = 2 V, VR = 10 V, f = 1 MHz | ||
| Series resistance | rS | - 0.4 | VR = 5 V, f = 470 MHz | ||
| Series resistance | rS | - 0.15 | VR = 5 V, f = 470 MHz |
2411220122_Infineon-BBY55-02WH6327_C3272470.pdf
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