Mobile communication VCO tuning diode Infineon BBY53-05WE6327 with low reverse voltage silicon design
Key Attributes
Model Number:
BBY53-05WE6327
Product Custom Attributes
Capacitance Ratio:
2.2@C1V/C3V
DC Reverse Voltage(Vr):
-
Diode Configuration:
1 Pair Common Cathode
Diode Capacitance:
3.1pF@3V,1MHz
Mfr. Part #:
BBY53-05WE6327
Package:
SOT-323-3
Product Description
Product Overview
The BBY53 is a high Q hyperabrupt silicon tuning diode designed for low tuning voltage operation in VCOs for mobile communications equipment. It offers a high capacitance ratio at low reverse voltage and is available in a Pb-free (RoHS compliant) package.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon
- Compliance: Pb-free (RoHS compliant)
Technical Specifications
| Model | Package | Configuration | LS (nH) | Marking |
|---|---|---|---|---|
| BBY53 | SOT23 | common cathode | 2 | S7s |
| BBY53-02L | TSLP-2-1 | single, leadless | 0.4 | LL |
| BBY53-02V | SC79 | single | 0.6 | L |
| BBY53-02W | SCD80 | single | 0.6 | LL |
| BBY53-03W | SOD323 | single | 1.8 | white |
| BBY53-05W | SOT323 | common cathode | 1.4 | 5 |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Maximum Ratings at TA = 25C, unless otherwise specified | |||
| Diode reverse voltage | VR | 6 | V |
| Forward current | IF | 20 | mA |
| Operating temperature range | Top | -55 ... 125 | C |
| Storage temperature | Tstg | -55 ... 150 | C |
| Electrical Characteristics at TA = 25C, unless otherwise specified | |||
| Reverse current (VR = 4 V) | IR | - | 10 nA |
| Reverse current (VR = 4 V, TA = 85 C) | IR | - | 200 nA |
| Diode capacitance (VR = 1 V, f = 1 MHz) | CT | 4.8 - 5.8 | pF |
| Diode capacitance (VR = 3 V, f = 1 MHz) | CT | 1.85 - 3.1 | pF |
| Capacitance ratio (VR = 1 V, VR = 3 V, f = 1 MHz) | CT1/CT3 | 1.8 - 2.6 | - |
| Series resistance (VR = 1 V, f = 1 GHz) | rS | - 0.47 | |
2410121845_Infineon-BBY53-05WE6327_C3272486.pdf
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