Low series resistance silicon tuning diode Infineon BB669 with inline matching and Pb free RoHS compliance

Key Attributes
Model Number: BB669
Product Custom Attributes
Capacitance Ratio:
20.9@C1V/C28V
Diode Configuration:
Independent
DC Reverse Voltage(Vr):
30V
Diode Capacitance:
2.9pF@28V,1MHz
Mfr. Part #:
BB669
Package:
SOD-323
Product Description

Product Overview

The BB669/BB689 series are high-performance Silicon Tuning Diodes designed for VHF TV tuners. They feature a very high capacitance ratio, low series resistance, and excellent uniformity and matching achieved through an "in-line" matching assembly procedure. These diodes are Pb-free and RoHS compliant, making them suitable for modern electronic designs.

Product Attributes

  • Brand: Infineon Technologies (implied by publisher and legal disclaimer)
  • Compliance: Pb-free (RoHS compliant)
  • Assembly Procedure: "in-line" matching

Technical Specifications

Model Type Package Configuration Marking LS (nH)
BB669 Diode SOD323 single red 1.8
BB689 Diode SCD80 single 1 EE 0.6
BB689-02V Diode SC79 single E 0.6
Parameter Symbol Value Unit Condition
Diode reverse voltage VR 30 V Maximum Ratings at TA = 25C
Peak reverse voltage VRM 35 V R 5k, Maximum Ratings at TA = 25C
Forward current IF 20 mA Maximum Ratings at TA = 25C
Operating temperature range Top -55 ... 150 C Maximum Ratings
Storage temperature Tstg -55 ... 150 C Maximum Ratings
Reverse current IR - nA VR = 30 V, TA = 25C, Electrical Characteristics
Reverse current IR 10 nA VR = 30 V, TA = 85C, Electrical Characteristics
Reverse current IR 200 nA VR = 30 V, TA = 85C, Electrical Characteristics
Diode capacitance CT 51 pF VR = 1 V, f = 1 MHz, Electrical Characteristics
Diode capacitance CT 39.6 pF VR = 2 V, f = 1 MHz, Electrical Characteristics
Diode capacitance CT 2.6 pF VR = 25 V, f = 1 MHz, Electrical Characteristics
Diode capacitance CT 2.5 pF VR = 28 V, f = 1 MHz, Electrical Characteristics
Diode capacitance CT 56.5 pF VR = 1 V, f = 1 MHz, Electrical Characteristics
Diode capacitance CT 43.4 pF VR = 2 V, f = 1 MHz, Electrical Characteristics
Diode capacitance CT 2.8 pF VR = 25 V, f = 1 MHz, Electrical Characteristics
Diode capacitance CT 2.7 pF VR = 28 V, f = 1 MHz, Electrical Characteristics
Diode capacitance CT 61.5 pF VR = 1 V, f = 1 MHz, Electrical Characteristics
Diode capacitance CT 47.2 pF VR = 2 V, f = 1 MHz, Electrical Characteristics
Diode capacitance CT 3 pF VR = 25 V, f = 1 MHz, Electrical Characteristics
Diode capacitance CT 2.9 pF VR = 28 V, f = 1 MHz, Electrical Characteristics
Capacitance ratio CT1/CT28 18 - VR = 1 V, VR = 28 V, f = 1 MHz, Electrical Characteristics
Capacitance ratio CT1/CT28 20.9 - VR = 1 V, VR = 28 V, f = 1 MHz, Electrical Characteristics
Capacitance ratio CT1/CT28 23.2 - VR = 1 V, VR = 28 V, f = 1 MHz, Electrical Characteristics
Capacitance ratio CT2/CT25 14.5 - VR = 2 V, VR = 25 V, f = 1 MHz, Electrical Characteristics
Capacitance ratio CT2/CT25 15.5 - VR = 2 V, VR = 25 V, f = 1 MHz, Electrical Characteristics
Capacitance ratio CT2/CT25 17 - VR = 2 V, VR = 25 V, f = 1 MHz, Electrical Characteristics
Capacitance matching CT/CT - % VR = 1 ... 28 V, f = 1 MHz, 7 diodes sequence, Electrical Characteristics
Capacitance matching CT/CT 2 % VR = 1 ... 28 V, f = 1 MHz, 7 diodes sequence, Electrical Characteristics
Series resistance rS - VR = 8 V, f = 470 MHz, Electrical Characteristics
Series resistance rS 0.85 VR = 8 V, f = 470 MHz, Electrical Characteristics
Series resistance rS 1.2 VR = 8 V, f = 470 MHz, Electrical Characteristics
Series inductance LS 0.6 nH Electrical Characteristics

2410301807_Infineon-BB669_C3272480.pdf

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