industrial power module Infineon FP100R12N2T7 with TRENCHSTOP IGBT7 and solder contact technology
Key Attributes
Model Number:
FP100R12N2T7
Product Custom Attributes
Td(off):
324ns
Td(on):
171ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.076nF
Input Capacitance(Cies):
21.7nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.15V@2.5mA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
200A
Switching Energy(Eoff):
6.42mJ
Turn-On Energy (Eon):
10.4mJ
Mfr. Part #:
FP100R12N2T7
Package:
Through Hole,107.5x45mm
Product Description
Product Overview
The FP100R12N2T7 EconoPIM2 module integrates TRENCHSTOP IGBT7 and Emitter Controlled 7 diodes with an NTC temperature sensor. It offers electrical advantages such as low VCEsat and overload operation up to 175C. Mechanically, it features an Al2O3 substrate with low thermal resistance, a copper base plate, and solder contact technology. This module is qualified for industrial applications.
Product Attributes
- Brand: Infineon
- Product Line: EconoPIM2
- Technology: TRENCHSTOP IGBT7, Emitter Controlled 7 Diode
- Certifications: Qualified for industrial applications according to IEC 60747, 60749 and 60068
- Substrate Material: Al2O3
- Base Plate Material: Copper
Technical Specifications
| Component | Parameter | Symbol | Note or test condition | Values | Unit |
| Module | Isolation test voltage | VISOL | RMS, f = 50 Hz, t = 1 min | 2.5 | kV |
| Comparative tracking index | CTI | > 200 | |||
| Stray inductance module | LsCE | 35 | nH | ||
| Module lead resistance, terminals - chip | RAA'+CC' | TC=25C, per switch | 2.5 | m | |
| Module lead resistance, terminals - chip | RCC'+EE' | TC=25C, per switch | 4.3 | m | |
| Storage temperature | Tstg | -40 to 125 | C | ||
| Mounting torque for module mounting | M | M5, Screw | 3 to 6 | Nm | |
| Weight | G | 180 | g | ||
| Current under continuous operation (main AC/DC) | Limited to 80 | A rms | |||
| Current under continuous operation (connector pin) | Limited to 50 | A rms | |||
| Temperature under overload operation | Tvj op | > 150C allowed | 175 | C | |
| IGBT, Inverter | Collector-emitter voltage | VCES | Tvj = 25 C | 1200 | V |
| Continous DC collector current | ICDC | Tvj max = 175 C, TC = 95 C | 100 | A | |
| Repetitive peak collector current | ICRM | tP = 1 ms | 200 | A | |
| Gate-emitter peak voltage | VGES | 20 | V | ||
| Collector-emitter saturation voltage | VCE sat | IC = 100 A, VGE = 15 V | 1.50 (Tvj=25C), 1.64 (Tvj=125C), 1.72 (Tvj=175C) | V | |
| Gate threshold voltage | VGEth | IC = 2.5 mA, VCE = VGE, Tvj = 25 C | 5.15 to 6.45 | V | |
| Gate charge | QG | VGE = 15 V, VCE = 600 V | 1.8 | C | |
| Input capacitance | Cies | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 21.7 | nF | |
| Reverse transfer capacitance | Cres | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 0.076 | nF | |
| Collector-emitter cut-off current | ICES | VCE = 1200 V, VGE = 0 V, Tvj = 25 C | 0.01 | mA | |
| Turn-on delay time | tdon | IC = 100 A, VCE = 600 V, VGE = 15 V, RGon = 4.3 | 0.171 (Tvj=25C), 0.185 (Tvj=125C), 0.190 (Tvj=175C) | s | |
| Rise time | tr | IC = 100 A, VCE = 600 V, VGE = 15 V, RGon = 4.3 | 0.050 (Tvj=25C), 0.055 (Tvj=125C), 0.058 (Tvj=175C) | s | |
| Turn-off delay time | tdoff | IC = 100 A, VCE = 600 V, VGE = 15 V, RGoff = 4.3 | 0.324 (Tvj=25C), 0.433 (Tvj=125C), 0.494 (Tvj=175C) | s | |
| Fall time | tf | IC = 100 A, VCE = 600 V, VGE = 15 V, RGoff = 4.3 | 0.093 (Tvj=25C), 0.183 (Tvj=125C), 0.245 (Tvj=175C) | s | |
| Turn-on energy loss per pulse | Eon | IC = 100 A, VCE = 600 V, L = 35 nH, VGE = 15 V, RGon = 4.3 | 10.4 (Tvj=25C), 15.3 (Tvj=125C), 17.6 (Tvj=175C) | mJ | |
| Diode, Inverter | Repetitive peak reverse voltage | VRRM | Tvj = 25 C | 1200 | V |
| Continous DC forward current | IF | 100 | A | ||
| Repetitive peak forward current | IFRM | tP = 1 ms | 200 | A | |
| I2t - value | I2t | tP = 10 ms, VR = 0 V | 1000 (Tvj=125C), 930 (Tvj=175C) | As | |
| Forward voltage | VF | IF = 100 A | 1.72 (Tvj=25C), 1.59 (Tvj=125C), 1.52 (Tvj=175C) | V | |
| Peak reverse recovery current | IRM | VR = 600 V, IF = 100 A, VGE = -15 V, -diF/dt = 1450 A/s | 58.2 (Tvj=25C), 74.3 (Tvj=125C), 82.4 (Tvj=175C) | A | |
| Recovered charge | Qr | VR = 600 V, IF = 100 A, VGE = -15 V, -diF/dt = 1450 A/s | 9.83 (Tvj=25C), 15.9 (Tvj=125C), 20.1 (Tvj=175C) | C | |
| Diode, Rectifier | Repetitive peak reverse voltage | VRRM | Tvj = 25 C | 1600 | V |
| Maximum RMS forward current per chip | IFRMSM | TC = 110 C | 100 | A | |
| Maximum RMS current at rectifier output | IRMSM | TC = 110 C | 100 | A | |
| Surge forward current | IFSM | tP = 10 ms | 745 (Tvj=25C), 515 (Tvj=150C) | A | |
| I2t - value | I2t | tP = 10 ms | 2780 (Tvj=25C), 1330 (Tvj=150C) | As | |
| Forward voltage | VF | IF = 100 A, Tvj = 150 C | 1.16 | V | |
| NTC-Thermistor | Temperature under switching conditions | Tvj op | -40 to 175 | C | |
| Temperature under overload conditions | Tvj op | Allowed for overload | > 150 | C |
2504101957_Infineon-FP100R12N2T7_C44051119.pdf
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