High Temperature Stability and Low Gate Charge Infineon IKW08T120 IGBT Module for Frequency Converter
Key Attributes
Model Number:
IKW08T120
Product Custom Attributes
Pd - Power Dissipation:
70W
Td(off):
450ns
Td(on):
40ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
28pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@0.3mA
Gate Charge(Qg):
53nC@15V
Operating Temperature:
-40℃~+150℃
Reverse Recovery Time(trr):
80ns
Switching Energy(Eoff):
700uJ
Turn-On Energy (Eon):
670uJ
Input Capacitance(Cies):
600pF
Pulsed Current- Forward(Ifm):
24A
Output Capacitance(Coes):
36pF
Mfr. Part #:
IKW08T120
Package:
TO-247-3
Product Description
Product Overview
The IKW08T120 is a Low Loss DuoPack featuring an IGBT in TrenchStop and Fieldstop technology with a soft, fast recovery Emitter Controlled HE diode. It offers reduced VCE(sat) and VF compared to BUP305D, a short circuit withstand time of 10s, and is designed for frequency converters and uninterrupted power supply applications. Its TrenchStop and Fieldstop technology ensures tight parameter distribution, high ruggedness, and temperature-stable behavior. The NPT technology allows for easy parallel switching due to a positive temperature coefficient in VCE(sat). It also boasts low EMI, low gate charge, and a very soft, fast recovery anti-parallel Emitter Controlled HE diode. The device is qualified according to JEDEC standards for target applications and is Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Series: TrenchStop Series IFAG IPC TD VLS
- Technology: TrenchStop, Fieldstop, NPT
- Certifications: JEDEC, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC | VCE(sat),Tj=25C | Tj,max | Marking Code | Package |
|---|---|---|---|---|---|---|
| IKW08T120 | 1200V | 8A | 1.7V | 150C | K08T120 | PG-TO-247-3 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CES | VGE=0V, IC=0.5mA | 1200 | - | - | V |
| Collector-emitter saturation voltage | VCE(sat) | VGE=15V, IC=8A, Tj=25C | - | 1.7 | - | V |
| Collector-emitter saturation voltage | VCE(sat) | VGE=15V, IC=8A, Tj=125C | - | 2.0 | - | V |
| Collector-emitter saturation voltage | VCE(sat) | VGE=15V, IC=8A, Tj=150C | - | 2.2 | - | V |
| Diode forward voltage | VF | VGE=0V, IF=8A, Tj=25C | - | 1.7 | - | V |
| Diode forward voltage | VF | VGE=0V, IF=8A, Tj=125C | - | 1.7 | - | V |
| Diode forward voltage | VF | VGE=0V, IF=8A, Tj=150C | - | 1.7 | - | V |
| Gate-emitter threshold voltage | VGE(th) | IC=0.3mA,VCE=VGE | 5.0 | 5.8 | 6.5 | V |
| Zero gate voltage collector current | ICEs | VCE=1200V, VGE=0V, Tj=25C | - | 0.2 | - | mA |
| Zero gate voltage collector current | ICEs | VCE=1200V, VGE=0V, Tj=150C | - | 2.0 | - | mA |
| Gate-emitter leakage current | IGEs | VCE=0V,VGE=20V | - | - | 100 | nA |
| Transconductance | gfs | VCE=20V, IC=8A | - | 5 | - | S |
| Input capacitance | Ciss | VCE=25V, VGE=0V, f=1MHz | - | 600 | - | pF |
| Output capacitance | Coss | VCE=25V, VGE=0V, f=1MHz | - | 36 | - | pF |
| Reverse transfer capacitance | Crss | VCE=25V, VGE=0V, f=1MHz | - | 28 | - | pF |
| Gate charge | Qg | VCC=960V, IC=8A, VGE=15V | - | 53 | - | nC |
| Diode reverse recovery time | trr | Tj=25C, VR=600V, IF=8A, diF/dt=600A/s | - | 80 | - | ns |
| Diode reverse recovery charge | Qrr | Tj=25C, VR=600V, IF=8A, diF/dt=600A/s | - | 1.0 | - | C |
| Diode peak reverse recovery current | Irr | Tj=25C, VR=600V, IF=8A, diF/dt=600A/s | - | 13 | - | A |
| Diode reverse recovery time | trr | Tj=150C, VR=600V, IF=8A, diF/dt=600A/s | - | 200 | - | ns |
| Diode reverse recovery charge | Qrr | Tj=150C, VR=600V, IF=8A, diF/dt=600A/s | - | 2.3 | - | C |
| Diode peak reverse recovery current | Irr | Tj=150C, VR=600V, IF=8A, diF/dt=600A/s | - | 20 | - | A |
| Parameter | Symbol | Conditions | Typ. | Unit |
|---|---|---|---|---|
| Turn-on delay time | td(on) | Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 40 | ns |
| Rise time | tr | Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 23 | ns |
| Turn-off delay time | td(off) | Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 450 | ns |
| Fall time | tf | Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 70 | ns |
| Turn-on energy | Eon | Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 0.67 | mJ |
| Turn-off energy | Eoff | Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 0.7 | mJ |
| Total switching energy | Ets | Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 1.37 | mJ |
| Turn-on delay time | td(on) | Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 40 | ns |
| Rise time | tr | Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 26 | ns |
| Turn-off delay time | td(off) | Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 570 | ns |
| Fall time | tf | Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 140 | ns |
| Turn-on energy | Eon | Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 1.08 | mJ |
| Turn-off energy | Eoff | Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 1.2 | mJ |
| Total switching energy | Ets | Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 2.28 | mJ |
2410121837_Infineon-IKW08T120_C168885.pdf
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