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quality EconoDUAL3 IGBT Module Infineon FF225R12ME4 with Trench Fieldstop IGBT4 and Emitter Controlled HE Diode factory
quality EconoDUAL3 IGBT Module Infineon FF225R12ME4 with Trench Fieldstop IGBT4 and Emitter Controlled HE Diode factory
quality EconoDUAL3 IGBT Module Infineon FF225R12ME4 with Trench Fieldstop IGBT4 and Emitter Controlled HE Diode factory
quality EconoDUAL3 IGBT Module Infineon FF225R12ME4 with Trench Fieldstop IGBT4 and Emitter Controlled HE Diode factory

EconoDUAL3 IGBT Module Infineon FF225R12ME4 with Trench Fieldstop IGBT4 and Emitter Controlled HE Diode

Key Attributes
Model Number: FF225R12ME4
Product Custom Attributes
Td(off):
380ns
Pd - Power Dissipation:
1.05kW
Td(on):
160ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.705nF
Input Capacitance(Cies):
13nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.15V@15V,225A
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
450A
Switching Energy(Eoff):
17mJ
Turn-On Energy (Eon):
6.8mJ
Mfr. Part #:
FF225R12ME4
Package:
Screw Terminals
Product Description

FF225R12ME4 IGBT Module

The FF225R12ME4 is an EconoDUAL3 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled HE diode with NTC. It offers low VCEsat and operates at Tvj op = 150C. This module is suitable for applications such as motor drives, servo drives, UPS systems, and wind turbines.

Product Attributes

  • Brand: EconoDUAL3
  • Certifications: UL approved (E83335)

Technical Specifications

ParameterValueUnitNotes
IGBT, Inverter
Collector-emitter voltage1200VVCES, Tvj = 25C
Continuous DC collector current225AIC nom, TC = 95C, Tvj max = 175C
Continuous DC collector current320AIC, TC = 25C, Tvj max = 175C
Repetitive peak collector current450AICRM, tP = 1 ms
Total power dissipation1050WPtot, TC = 25C, Tvj max = 175C
Gate-emitter peak voltage+/-20VVGES
Collector-emitter saturation voltage1.85 - 2.15VIC = 225 A, VGE = 15 V, Tvj = 25C - 150C
Gate threshold voltage5.2 - 6.4VIC = 7.80 mA, VCE = VGE, Tvj = 25C
Gate charge1.55CVGE = -15 V ... +15 V
Internal gate resistor3.3Tvj = 25C
Input capacitance13.0nFCies, f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Reverse transfer capacitance0.705nFCres, f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Collector-emitter cut-off current3.0mAICES, VCE = 1200 V, VGE = 0 V, Tvj = 25C
Gate-emitter leakage current400nAIGES, VCE = 0 V, VGE = 20 V, Tvj = 25C
Turn-on delay time0.16 - 0.18std on, IC = 225 A, VCE = 600 V, VGE = 15 V, RGon = 1.6 , Tvj = 25C - 150C
Rise time0.04str, IC = 225 A, VCE = 600 V, VGE = 15 V, RGon = 1.6 , Tvj = 25C - 150C
Turn-off delay time0.38 - 0.50std off, IC = 225 A, VCE = 600 V, VGE = 15 V, RGoff = 1.6 , Tvj = 25C - 150C
Fall time0.07 - 0.10stf, IC = 225 A, VCE = 600 V, VGE = 15 V, RGoff = 1.6 , Tvj = 25C - 150C
Turn-on energy loss per pulse6.80 - 15.0mJEon, IC = 225 A, VCE = 600 V, LS = 80 nH, VGE = 15 V, Tvj = 25C - 150C
Turn-off energy loss per pulse17.0 - 29.5mJEoff, IC = 225 A, VCE = 600 V, LS = 80 nH, VGE = 15 V, Tvj = 25C - 150C
Short circuit capability900AISC, VGE 15 V, VCC = 800 V, Tvj = 150C, tP 10 s
Thermal resistance, junction to case0.14K/WRthJC, per IGBT
Thermal resistance, case to heatsink0.031K/WRthCH, per IGBT, Paste = 1 W/(mK)
Temperature under switching conditions-40 - 150CTvj op
Diode, Inverter
Repetitive peak reverse voltage1200VVRRM, Tvj = 25C
Continuous DC forward current225AIF
Repetitive peak forward current450AIFRM, tP = 1 ms
It value10000 - 8100AsVR = 0 V, tP = 10 ms, Tvj = 125C - 150C
Forward voltage1.65 - 2.10VVF, IF = 225 A, VGE = 0 V, Tvj = 25C - 150C
Peak reverse recovery current300 - 340AIRM, IF = 225 A, -diF/dt = 5750 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C
Recovered charge22.5 - 49.5CQr, IF = 225 A, -diF/dt = 5750 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C
Reverse recovery energy12.0 - 25.0mJErec, IF = 225 A, -diF/dt = 5750 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C
Thermal resistance, junction to case0.19K/WRthJC, per diode
Thermal resistance, case to heatsink0.042K/WRthCH, per diode, Paste = 1 W/(mK)
Temperature under switching conditions-40 - 150CTvj op
NTC Thermistor
Rated resistance5.00kR25, TC = 25C
Deviation of R100-5 - 5%R/R, TC = 100C, R100 = 493
Power dissipation20.0mWP25, TC = 25C
B-Value3375 - 3433KB25/50 - B25/100
Module
Isolation test voltage2.5kVVISOL, RMS, f = 50 Hz, t = 1 min
Material of module baseplateCu
Internal isolationAl2O3Basic insulation (class 1, IEC 61140)
Creepage distance14.5 - 13.0mmTerminal to heatsink / terminal to terminal
Clearance12.5 - 10.0mmTerminal to heatsink / terminal to terminal
Comperative tracking index> 200CTI
Thermal resistance, case to heatsink0.009K/WRthCH, per module, Paste = 1 W/(mK)
Stray inductance module20nHLsCE
Module lead resistance, terminals - chip1.30mRCC'+EE', TC = 25C, per switch
Storage temperature-40 - 125CTstg
Mounting torque for module mounting3.00 - 6.00NmScrew M5
Terminal connection torque3.0 - 6.0NmScrew M6
Weight345gG

2411220246_Infineon-FF225R12ME4_C17502992.pdf

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