power module Infineon FZ600R17KE3 with Trench Fieldstop IGBT3 and emitter controlled diode technology
Key Attributes
Model Number:
FZ600R17KE3
Product Custom Attributes
Td(off):
800ns
Pd - Power Dissipation:
3.15kW
Td(on):
280ns
Collector-Emitter Breakdown Voltage (Vces):
1.7kV
Reverse Transfer Capacitance (Cres):
1.7nF
Input Capacitance(Cies):
54nF@25V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@24mA
Operating Temperature:
-40℃~+125℃@(Tj)
Pulsed Current- Forward(Ifm):
1200A
Switching Energy(Eoff):
130mJ
Turn-On Energy (Eon):
140mJ
Mfr. Part #:
FZ600R17KE3
Product Description
Product Overview
The FZ600R17KE3 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode technology. It offers low switching losses, low VCEsat, high robustness, and a positive temperature coefficient for VCEsat. This module is designed for high-power converter, motor drive, and wind turbine applications.
Product Attributes
- UL Approved (E83335)
- Package with CTI > 400
- High Creepage and Clearance Distances
- Isolated Base Plate
- Standard Housing
Technical Specifications
| Parameter | Value | Unit | Notes |
| IGBT, Inverter - Maximum Rated Values | |||
| Collector-emitter voltage (VCES) | 1700 | V | Tvj = 25C |
| Continuous DC collector current (IC nom) | 600 | A | TC = 80C, Tvj max = 150C |
| Continuous DC collector current (IC) | 840 | A | TC = 25C, Tvj max = 150C |
| Repetitive peak collector current (ICRM) | 1200 | A | tP = 1 ms |
| Total power dissipation (Ptot) | 3150 | W | TC = 25C, Tvj max = 150C |
| Gate-emitter peak voltage (VGES) | +/-20 | V | |
| IGBT, Inverter - Characteristic Values | |||
| Collector-emitter saturation voltage (VCEsat) | 2.00 - 2.45 | V | IC = 600 A, VGE = 15 V |
| Gate threshold voltage (VGEth) | 5.2 - 6.4 | V | IC = 24.0 mA, VCE = VGE, Tvj = 25C |
| Gate charge (QG) | 7.00 | C | VGE = -15 V ... +15 V |
| Internal gate resistor (RGint) | 1.3 | Tvj = 25C | |
| Input capacitance (Cies) | 54.0 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Reverse transfer capacitance (Cres) | 1.70 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Collector-emitter cut-off current (ICES) | 3.0 | mA | VCE = 1700 V, VGE = 0 V, Tvj = 25C |
| Gate-emitter leakage current (IGES) | 400 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C |
| Turn-on delay time (td on) | 0.28 - 0.30 | s | IC = 600 A, VCE = 900 V, VGE = 15 V, RGon = 2.4 |
| Rise time (tr) | 0.08 - 0.10 | s | IC = 600 A, VCE = 900 V, VGE = 15 V, RGon = 2.4 |
| Turn-off delay time (td off) | 0.80 - 1.00 | s | IC = 600 A, VCE = 900 V, VGE = 15 V, RGoff = 2.4 |
| Fall time (tf) | 0.12 - 0.20 | s | IC = 600 A, VCE = 900 V, VGE = 15 V, RGoff = 2.4 |
| Turn-on energy loss per pulse (Eon) | 140 - 200 | mJ | IC = 600 A, VCE = 900 V, LS = 60 nH, VGE = 15 V, di/dt = 4600 A/s, RGon = 2.4 |
| Turn-off energy loss per pulse (Eoff) | 130 - 190 | mJ | IC = 600 A, VCE = 900 V, LS = 60 nH, VGE = 15 V, du/dt = 3750 V/s, RGoff = 2.4 |
| Short circuit data (ISC) | 2400 | A | VGE 15 V, VCC = 1000 V, Tvj = 125C, tP 10 s |
| Thermal resistance, junction to case (RthJC) | 0.04 | K/W | per IGBT |
| Thermal resistance, case to heatsink (RthCH) | 0.016 | K/W | per IGBT, Paste = 1 W/(mK) |
| Operating temperature (Tvj op) | -40 - 125 | C | |
| Diode, Inverter - Maximum Rated Values | |||
| Repetitive peak reverse voltage (VRRM) | 1700 | V | Tvj = 25C |
| Continuous DC forward current (IF) | 600 | A | |
| Repetitive peak forward current (IFRM) | 1200 | A | tP = 1 ms |
| It - value | 56500 | As | VR = 0 V, tP = 10 ms, Tvj = 125C |
| Diode, Inverter - Characteristic Values | |||
| Forward voltage (VF) | 1.80 - 2.20 | V | IF = 600 A |
| Peak reverse recovery current (IRM) | 640 - 700 | A | IF = 600 A, -diF/dt = 4600 A/s, VR = 900 V, VGE = -15 V |
| Recovered charge (Qr) | 150 - 250 | C | IF = 600 A, -diF/dt = 4600 A/s, VR = 900 V, VGE = -15 V |
| Reverse recovery energy (Erec) | 81.0 - 145 | mJ | IF = 600 A, -diF/dt = 4600 A/s, VR = 900 V, VGE = -15 V |
| Thermal resistance, junction to case (RthJC) | 0.065 | K/W | per diode |
| Thermal resistance, case to heatsink (RthCH) | 0.026 | K/W | per diode, Paste = 1 W/(mK) |
| Operating temperature (Tvj op) | -40 - 125 | C | |
| Module | |||
| Isolation test voltage (VISOL) | 3.4 | kV | RMS, f = 50 Hz, t = 1 min. |
| Material of module baseplate | Cu | ||
| Internal isolation | Al2O3 | basic insulation (class 1, IEC 61140) | |
| Creepage distance (terminal to heatsink) | 25.0 | mm | |
| Creepage distance (terminal to terminal) | 19.0 | mm | |
| Clearance (terminal to heatsink) | 25.0 | mm | |
| Clearance (terminal to terminal) | 10.0 | mm | |
| Comparative tracking index (CTI) | > 400 | ||
| Stray inductance module (LsCE) | 16 | nH | |
| Module lead resistance (RCC'+EE') | 0.50 | m | TC = 25C, per switch |
| Storage temperature (Tstg) | -40 - 125 | C | |
| Mounting torque for module mounting (Screw M6) | 3.00 - 6.00 | Nm | Mounting according to valid application note |
| Terminal connection torque (Screw M4) | 1.8 | Nm | Mounting according to valid application note |
| Terminal connection torque (Screw M6) | 2.5 - 5.0 | Nm | Mounting according to valid application note |
| Weight (G) | 340 | g | |
2411220055_Infineon-FZ600R17KE3_C17636229.pdf
Related Products
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
