High Speed Switching Infineon IKW50N65F5 IGBT 650V 50A with TRENCHSTOP 5 Technology and RAPID 1 Diode
Key Attributes
Model Number:
IKW50N65F5
Product Custom Attributes
Td(off):
175ns
Pd - Power Dissipation:
305W
Td(on):
21ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
11pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.5mA
Gate Charge(Qg):
120nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
52ns
Switching Energy(Eoff):
160uJ
Turn-On Energy (Eon):
490uJ
Input Capacitance(Cies):
3nF
Pulsed Current- Forward(Ifm):
150A
Output Capacitance(Coes):
65pF
Mfr. Part #:
IKW50N65F5
Package:
TO-247-3
Product Description
Product Overview
The IKW50N65F5 is a high-speed 5 FAST IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. Designed for high-speed switching applications, it offers best-in-class efficiency in hard switching and resonant topologies. This device features a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175C, making it suitable for demanding industrial applications.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5
- Diode: RAPID 1 fast and soft antiparallel diode
- Certifications: Qualified according to JEDEC, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC | VCEsat, Tvj=25C | Tvjmax | Marking | Package |
| IKW50N65F5 | 650V | 50A | 1.6V | 175C | K50EF5 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter voltage | VCE | DC | 650 | V |
| DC collector current, limited by Tvjmax | IC | TC = 25C | 80.0 | A |
| DC collector current, limited by bondwire | IC | TC = 100C | 56.0 | A |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | 150.0 | A | |
| Diode forward current, limited by Tvjmax | IF | TC = 25C | 40.0 | A |
| Diode forward current, limited by bondwire | IF | TC = 100C | 27.0 | A |
| Diode pulsed current, tp limited by Tvjmax | IFpuls | 150.0 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | tp 10s, D < 0.010 | 30 | V |
| Power dissipation | Ptot | TC = 25C | 305.0 | W |
| Power dissipation | Ptot | TC = 100C | 152.5 | W |
| Operating junction temperature | Tvj | -40...+175 | C | |
| Storage temperature | Tstg | -55...+150 | C | |
| IGBT thermal resistance, junction - case | Rth(j-c) | 0.50 | K/W | |
| Diode thermal resistance, junction - case | Rth(j-c) | 1.50 | K/W | |
| Thermal resistance junction - ambient | Rth(j-a) | 40 | K/W | |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 50.0A, Tvj = 25C | 1.60 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 50.0A, Tvj = 125C | 1.80 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 50.0A, Tvj = 175C | 1.90 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 27.0A, Tvj = 25C | 1.45 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 27.0A, Tvj = 125C | 1.40 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 27.0A, Tvj = 175C | 1.40 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.50mA, VCE = VGE | 4.0 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | 40.0 | A |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 175C | 4000.0 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 50.0A | 62.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 3000 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 65 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 11 | pF |
| Gate charge | QG | VCC = 520V, IC = 50.0A, VGE = 15V | 120.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 21 | ns |
| Rise time | tr | Tvj = 25C, VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 15 | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 175 | ns |
| Fall time | tf | Tvj = 25C, VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 18 | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 0.49 | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 0.16 | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 0.65 | mJ |
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 19 | ns |
| Rise time | tr | Tvj = 25C, VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 4 | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 195 | ns |
| Fall time | tf | Tvj = 25C, VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 10 | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 0.11 | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 0.04 | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 0.15 | mJ |
| Diode reverse recovery time | trr | Tvj = 25C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s | 52 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s | 0.55 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s | 16.5 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 25C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s | -450 | A/s |
| Diode reverse recovery time | trr | Tvj = 25C, VR = 400V, IF = 6.0A, diF/dt = 1200A/s | 32 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C, VR = 400V, IF = 6.0A, diF/dt = 1200A/s | 0.26 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C, VR = 400V, IF = 6.0A, diF/dt = 1200A/s | 13.3 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 25C, VR = 400V, IF = 6.0A, diF/dt = 1200A/s | -1619 | A/s |
| Turn-on delay time | td(on) | Tvj = 150C, VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 20 | ns |
| Rise time | tr | Tvj = 150C, VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 15 | ns |
| Turn-off delay time | td(off) | Tvj = 150C, VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 202 | ns |
| Fall time | tf | Tvj = 150C, VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 3 | ns |
| Turn-on energy | Eon | Tvj = 150C, VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 0.68 | mJ |
| Turn-off energy | Eoff | Tvj = 150C, VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 0.21 | mJ |
| Total switching energy | Ets | Tvj = 150C, VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 0.89 | mJ |
| Turn-on delay time | td(on) | Tvj = 150C, VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 18 | ns |
| Rise time | tr | Tvj = 150C, VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 5 | ns |
| Turn-off delay time | td(off) | Tvj = 150C, VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 245 | ns |
| Fall time | tf | Tvj = 150C, VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 12 | ns |
| Turn-on energy | Eon | Tvj = 150C, VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 0.18 | mJ |
| Turn-off energy | Eoff | Tvj = 150C, VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 0.06 | mJ |
| Total switching energy | Ets | Tvj = 150C, VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0, L = 30nH, C = 30pF | 0.24 | mJ |
| Diode reverse recovery time | trr | Tvj = 150C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s | 81 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 150C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s | 1.24 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 150C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s | 22.0 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 150C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s | -340 | A/s |
| Diode reverse recovery time | trr | Tvj = 150C, VR = 400V, IF = 6.0A, diF/dt = 1200A/s | 46 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 150C, VR = 400V, IF = 6.0A, diF/dt = 1200A/s | 0.60 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 150C, VR = 400V, IF = 6.0A, diF/dt = 1200A/s | 19.5 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 150C, VR = 400V, IF = 6.0A, diF/dt = 1200A/s | -825 | A/s |
2410121815_Infineon-IKW50N65F5_C536219.pdf
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