86--136 6733 2386
quality EconoDUAL3 Infineon FF600R17ME4 IGBT Module Featuring Low VCEsat and Positive Temperature Coefficient factory
quality EconoDUAL3 Infineon FF600R17ME4 IGBT Module Featuring Low VCEsat and Positive Temperature Coefficient factory

EconoDUAL3 Infineon FF600R17ME4 IGBT Module Featuring Low VCEsat and Positive Temperature Coefficient

Key Attributes
Model Number: FF600R17ME4
Product Custom Attributes
Mfr. Part #:
FF600R17ME4
Product Description

Infineon EconoDUAL3 Module FF600R17ME4

The FF600R17ME4 is an EconoDUAL3 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled diode with NTC. It offers high current density, low VCEsat with a positive temperature coefficient, and high power density with an isolated base plate. This module is suitable for high power converters and wind turbines.

Product Attributes

  • Brand: Infineon
  • Series: EconoDUAL3
  • Module Label Code: FF600R17ME4
  • Material of module baseplate: Cu
  • Internal isolation: Basic insulation (class 1, IEC 61140)
  • Internal isolation material: Al2O3

Technical Specifications

Parameter Value Unit Condition
IGBT, Inverter
Collector-emitter voltage 1700 V Tvj = 25C
Continuous DC collector current 600 A TC = 108C, Tvj max = 175C
Repetitive peak collector current 1200 A tP = 1 ms
Gate-emitter peak voltage +/-20 V
Collector-emitter saturation voltage 1.95 V IC = 600 A, VGE = 15 V, Tvj = 25C
Collector-emitter saturation voltage 2.35 V IC = 600 A, VGE = 15 V, Tvj = 125C
Collector-emitter saturation voltage 2.45 V IC = 600 A, VGE = 15 V, Tvj = 150C
Gate threshold voltage 5.80 V IC = 24,0 mA, VCE = VGE, Tvj = 25C
Gate charge 6.15 C VGE = -15 V ... +15 V
Internal gate resistor 1.2 Tvj = 25C
Input capacitance 48.0 nF f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Reverse transfer capacitance 1.55 nF f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Collector-emitter cut-off current 1.0 mA VCE = 1700 V, VGE = 0 V, Tvj = 25C
Gate-emitter leakage current 100 nA VCE = 0 V, VGE = 20 V, Tvj = 25C
Turn-on delay time, inductive load 0.21 s IC = 600 A, VCE = 900 V, VGE = 15 V, RGon = 1.0 , Tvj = 125C
Rise time, inductive load 0.08 s IC = 600 A, VCE = 900 V, VGE = 15 V, RGon = 1.0 , Tvj = 125C
Turn-off delay time, inductive load 0.75 s IC = 600 A, VCE = 900 V, VGE = 15 V, RGoff = 1.0 , Tvj = 125C
Fall time, inductive load 0.16 s IC = 600 A, VCE = 900 V, VGE = 15 V, RGoff = 1.0 , Tvj = 125C
Turn-on energy loss per pulse 210 mJ IC = 600 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, di/dt = 6500 A/s, RGon = 1.0 , Tvj = 125C
Turn-off energy loss per pulse 180 mJ IC = 600 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, du/dt = 3000 V/s, RGoff = 1.0 , Tvj = 125C
Short circuit data 2300 A VGE 15 V, VCC = 1000 V, VCEmax = VCES - LsCE di/dt, tP 10 s, Tvj = 150C
Thermal resistance, junction to case per IGBT 0.0369 K/W
Thermal resistance, case to heatsink per IGBT 0.0328 K/W Paste = 1 W/(mK)
Temperature in switching operation 150 C Tvj op
Diode, Inverter
Repetitive peak reverse voltage 1700 V Tvj = 25C
Continuous DC forward current 600 A
Repetitive peak forward current 1200 A tP = 1 ms
It - value 30500 As VR = 0 V, tP = 10 ms, Tvj = 150C
Forward voltage 1.90 V IF = 600 A, VGE = 0 V, Tvj = 125C
Forward voltage 2.20 V IF = 600 A, VGE = 0 V, Tvj = 150C
Peak reverse recovery current 650 A IF = 600 A, - diF/dt = 6500 A/s, VR = 900 V, VGE = -15 V, Tvj = 125C
Recovered charge 250 C IF = 600 A, - diF/dt = 6500 A/s, VR = 900 V, VGE = -15 V, Tvj = 125C
Reverse recovery energy 145 mJ IF = 600 A, - diF/dt = 6500 A/s, VR = 900 V, VGE = -15 V, Tvj = 125C
Thermal resistance, junction to case per diode 0.0730 K/W
Thermal resistance, case to heatsink per diode 0.0378 K/W Paste = 1 W/(mK)
Temperature in switching operation 150 C Tvj op
NTC-Thermistor
Rated resistance 5.00 k TNTC = 25C
Deviation of R100 5 % TNTC = 100C, R100 = 493
Power dissipation 20.0 mW TNTC = 25C
B-Value 3375 K R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B-Value 3411 K R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B-Value 3433 K R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
Module
Isolation test voltage 3.4 kV RMS, f = 50 Hz, t = 1 min.
Creepage distance terminal to heatsink 14.5 mm
Clearance terminal to heatsink 12.5 mm
Comperative tracking index > 200
Stray inductance module 20 nH LsCE
Module lead resistance, terminals - chip per switch 1.10 m TC = 25C
Storage temperature 125 C Tstg
Mounting torque for module mounting Screw M5 6.00 Nm
Terminal connection torque Screw M6 6.0 Nm
Weight 345 g

2410010201_Infineon-FF600R17ME4_C541121.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion factory
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
quality Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing factory
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
quality Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage factory
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
quality High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications factory
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.