power switching solution Infineon IKA08N65H5 650V IGBT with TRENCHSTOP 5 technology and RAPID 1 diode
Key Attributes
Model Number:
IKA08N65H5
Product Custom Attributes
Pd - Power Dissipation:
31.2W
Td(off):
115ns
Td(on):
11ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
3pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.08mA
Gate Charge(Qg):
22nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
40ns
Switching Energy(Eoff):
30uJ
Turn-On Energy (Eon):
70uJ
Input Capacitance(Cies):
500pF
Pulsed Current- Forward(Ifm):
24A
Output Capacitance(Coes):
16pF
Mfr. Part #:
IKA08N65H5
Package:
TO-220FP-3
Product Description
Product Description
The IKA08N65H5 is a high-speed 5th generation IGBT from Infineon, featuring TRENCHSTOPTM 5 technology and copacked with a RAPID 1 fast and soft antiparallel diode. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown voltage and low QG, it is designed for demanding applications.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5, RAPID 1
- Certifications: JEDEC qualified, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC (TC=25C) | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IKA08N65H5 | 650V | 10.8A | 1.65V | 175C | K08EEH5 | PG-TO220-3 FP |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Static Characteristics | ||||||
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | - | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 8.0A | - | 1.65 | 2.10 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 9.0A | - | 1.45 | 1.80 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.08mA, VCE = VGE | 3.2 | 4.0 | 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V | - | 40.0 | 4000.0 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 8.0A | - | 17.0 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 500 | - | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - | 16 | - | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - | 3 | - | pF |
| Gate charge | QG | VCC = 520V, IC = 8.0A, VGE = 15V | - | 22.0 | - | nC |
| Switching Characteristics (Inductive Load) | ||||||
| Turn-on delay time (Tvj=25C) | td(on) | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 11 | - | ns |
| Rise time (Tvj=25C) | tr | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 5 | - | ns |
| Turn-off delay time (Tvj=25C) | td(off) | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 115 | - | ns |
| Fall time (Tvj=25C) | tf | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 15 | - | ns |
| Turn-on energy (Tvj=25C) | Eon | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 0.07 | - | mJ |
| Turn-off energy (Tvj=25C) | Eoff | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 0.03 | - | mJ |
| Total switching energy (Tvj=25C) | Ets | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 0.10 | - | mJ |
| Diode Characteristics (Tvj=25C) | ||||||
| Diode reverse recovery time | trr | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 40 | - | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 0.13 | - | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 6.8 | - | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | -220 | - | A/s |
2410121815_Infineon-IKA08N65H5_C536136.pdf
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