High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and RAPID 1 diode for switching
Key Attributes
Model Number:
IKW40N65H5
Product Custom Attributes
Td(off):
165ns
Pd - Power Dissipation:
250W
Td(on):
22ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
2.5nF@25V
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Operating Temperature:
-40℃~+175℃@(Tj)
Gate Charge(Qg):
95nC@40A,15V
Reverse Recovery Time(trr):
62ns
Switching Energy(Eoff):
120uJ
Turn-On Energy (Eon):
390uJ
Mfr. Part #:
IKW40N65H5
Package:
TO-247-3
Product Description
Product Overview
The IKP40N65H5 and IKW40N65H5 are high-speed 5th generation IGBTs featuring TRENCHSTOPTM 5 technology, copacked with RAPID 1 fast and soft antiparallel diodes. These devices offer best-in-class efficiency in hard switching and resonant topologies and serve as plug-and-play replacements for previous generation IGBTs. With a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175C, they are qualified according to JEDEC for target applications. They are Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5
- Diode: RAPID 1 fast and soft antiparallel diode
- Certifications: RoHS compliant, JEDEC qualified
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE (V) | IC (A) | VCEsat, Tvj=25C (V) | Tvjmax (C) | Marking | Package |
| IKP40N65H5 | 650 | 40 | 1.65 | 175 | K40EH5 | PG-TO220-3 |
| IKW40N65H5 | 650 | 40 | 1.65 | 175 | K40EH5 | PG-TO247-3 |
2411220107_Infineon-IKW40N65H5_C454249.pdf
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