Infineon IGW40N60H3 IGBT featuring low EMI and soft fast recovery diode with TRENCHSTOP technology
Key Attributes
Model Number:
IGW40N60H3
Product Custom Attributes
Td(off):
197ns
Pd - Power Dissipation:
306W
Td(on):
19ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
65pF
Input Capacitance(Cies):
2.194nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@0.58mA
Operating Temperature:
-40℃~+175℃
Output Capacitance(Coes):
82pF
Switching Energy(Eoff):
580uJ
Turn-On Energy (Eon):
1.1mJ
Mfr. Part #:
IGW40N60H3
Package:
TO-247-3
Product Description
Product Overview
The IGW40N60H3 is a high-speed IGBT from Infineon's third-generation series, featuring TRENCHSTOP technology. This technology offers very low VCEsat, low EMI, and a very soft, fast recovery anti-parallel diode. Designed for demanding applications, it boasts a maximum junction temperature of 175C and is qualified according to JEDEC standards for target applications. This IGBT is Pb-free and RoHS compliant, with PSpice models available for simulation.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOP
- Certifications: RoHS compliant, JEDEC qualified
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IGW40N60H3 | 600V | 40A | 1.95V | 175C | G40H603 | PG-TO247-3 |
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 600 | V |
| DC collector current, TC = 25C | IC | 80.0 | A |
| DC collector current, TC = 100C | IC | 40.0 | A |
| Pulsed collector current | ICpuls | 160.0 | A |
| Gate-emitter voltage | VGE | 20 | V |
| Power dissipation, TC = 25C | Ptot | 306.0 | W |
| Power dissipation, TC = 100C | Ptot | 153.0 | W |
| Operating junction temperature | Tvj | -40...+175 | C |
| Storage temperature | Tstg | -55...+150 | C |
| Soldering temperature | 260 | C | |
| Mounting torque, M3 screw | M | 0.6 | Nm |
Thermal Resistance
| Parameter | Symbol | Conditions | Max. Value | Unit |
| IGBT thermal resistance, junction - case | Rth(j-c) | 0.49 | K/W | |
| Thermal resistance junction - ambient | Rth(j-a) | 40 | K/W |
Electrical Characteristics
| Parameter | Symbol | Conditions | min. | typ. | max. | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 2.00mA | 600 | - | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 40.0A, Tvj = 25C | - | 1.95 | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 40.0A, Tvj = 150C | - | 2.30 | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 40.0A, Tvj = 175C | - | 2.40 | - | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.58mA, VCE = VGE | 4.1 | 5.1 | 5.7 | V |
| Zero gate voltage collector current | ICES | VCE = 600V, VGE = 0V, Tvj = 25C | - | - | 40.0 | A |
| Zero gate voltage collector current | ICES | VCE = 600V, VGE = 0V, Tvj = 175C | - | - | 3000.0 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 40.0A | - | 24.0 | - | S |
Dynamic Characteristics
| Parameter | Symbol | Conditions | typ. | Unit |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 2194 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 82 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 65 | pF |
| Gate charge | QG | VCC = 480V, IC = 40.0A, VGE = 15V | 223.0 | nC |
| Internal emitter inductance | LE | measured 5mm (0.197 in.) from case | 13.0 | nH |
Switching Characteristics (Inductive Load)
| Parameter | Symbol | Conditions | min. | typ. | max. | Unit |
| Turn-on delay time | td(on) | Tvj = 25C | - | 19 | - | ns |
| Rise time | tr | Tvj = 25C | - | 33 | - | ns |
| Turn-off delay time | td(off) | Tvj = 25C | - | 197 | - | ns |
| Fall time | tf | Tvj = 25C | - | 21 | - | ns |
| Turn-on energy | Eon | Tvj = 25C | - | 1.10 | - | mJ |
| Turn-off energy | Eoff | Tvj = 25C | - | 0.58 | - | mJ |
| Total switching energy | Ets | Tvj = 25C | - | 1.68 | - | mJ |
| Turn-on delay time | td(on) | Tvj = 175C | - | 19 | - | ns |
| Rise time | tr | Tvj = 175C | - | 29 | - | ns |
| Turn-off delay time | td(off) | Tvj = 175C | - | 227 | - | ns |
| Fall time | tf | Tvj = 175C | - | 22 | - | ns |
| Turn-on energy | Eon | Tvj = 175C | - | 1.33 | - | mJ |
| Turn-off energy | Eoff | Tvj = 175C | - | 0.79 | - | mJ |
| Total switching energy | Ets | Tvj = 175C | - | 2.12 | - | mJ |
Applications
- Uninterruptible power supplies
- Welding converters
- Converters with high switching frequency
2410121717_Infineon-IGW40N60H3_C536099.pdf
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