EconoPACK3 module featuring Infineon FS200R12N3T7 with TRENCHSTOPIGBT7 emitter controlled diode and NTC sensor
Key Attributes
Model Number:
FS200R12N3T7
Product Custom Attributes
Td(off):
352ns
Td(on):
172ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.14nF
Input Capacitance(Cies):
40.3nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.15V@4.6mA
Gate Charge(Qg):
3.34uC
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
400A
Switching Energy(Eoff):
13.6mJ
Turn-On Energy (Eon):
25.5mJ
Mfr. Part #:
FS200R12N3T7
Package:
Through Hole,122x62.5mm
Product Description
EconoPACK3 Module with TRENCHSTOPIGBT7 and Emitter Controlled 7 Diode and NTC
The EconoPACK3 module integrates TRENCHSTOPIGBT7 technology with an emitter-controlled 7 diode and an NTC temperature sensor. This module is designed for high power and thermal cycling capabilities, featuring a low VCE,sat for efficient operation. It is qualified for industrial applications and suitable for overload operation up to 175C. Key mechanical features include a solder contact technology, an Al2O3 substrate with low thermal resistance, and a copper base plate.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPIGBT7, Emitter Controlled 7 Diode
- Features: Integrated NTC temperature sensor, High power and thermal cycling capability, Solder contact technology, Al2O3 substrate with low thermal resistance, Copper base plate
- Certifications: Qualified for industrial applications according to IEC 60747, 60749 and 60068
Technical Specifications
| Parameter | Symbol | Note or test condition | Values | Unit |
| Electrical Features | ||||
| Collector-emitter voltage | VCES | Tvj = 25 C | 1200 | V |
| Continuous DC collector current | ICDC | Tvj max = 175 C, TC = 75 C | 200 | A |
| Repetitive peak collector current | ICRM | tp limited by Tvj op | 400 | A |
| Gate-emitter peak voltage | VGES | 20 | V | |
| Collector-emitter saturation voltage | VCE sat | IC = 200 A, VGE = 15 V | 1.55 - 1.80 (Tvj = 25 C) 1.69 (Tvj = 125 C) 1.77 (Tvj = 175 C) | V |
| Gate threshold voltage | VGEth | IC = 4.6 mA, VCE = VGE, Tvj = 25 C | 5.15 - 6.45 | V |
| Gate charge | QG | VGE = 15 V, VCE = 600 V | 3.34 | C |
| Input capacitance | Cies | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 40.3 | nF |
| Reverse transfer capacitance | Cres | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 0.14 | nF |
| Collector-emitter cut-off current | ICES | VCE = 1200 V, VGE = 0 V, Tvj = 25 C | 0.016 | mA |
| Gate-emitter leakage current | IGES | VCE = 0 V, VGE = 20 V, Tvj = 25 C | 100 | nA |
| Turn-on delay time (inductive load) | tdon | IC = 200 A, VCE = 600 V, VGE = 15 V, RGon = 3 | 0.172 - 0.192 | s |
| Rise time (inductive load) | tr | IC = 200 A, VCE = 600 V, VGE = 15 V, RGon = 3 | 0.063 - 0.074 | s |
| Turn-off delay time (inductive load) | tdoff | IC = 200 A, VCE = 600 V, VGE = 15 V, RGoff = 3 | 0.352 - 0.486 | s |
| Fall time (inductive load) | tf | IC = 200 A, VCE = 600 V, VGE = 15 V, RGoff = 3 | 0.092 - 0.254 | s |
| Turn-on energy loss per pulse | Eon | IC = 200 A, VCE = 600 V, L = 35 nH, VGE = 15 V, RGon = 3 , di/dt = 2300 A/s | 25.5 - 32.8 | mJ |
| Turn-off energy loss per pulse | Eoff | IC = 200 A, VCE = 600 V, L = 35 nH, VGE = 15 V, RGoff = 3 , dv/dt = 3100 V/s | 13.6 - 26.7 | mJ |
| SC data | ISC | VGE 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt, tP 8 s | 640 (Tvj=150 C) 600 (Tvj=175 C) | A |
| Repetitive peak reverse voltage | VRRM | Tvj = 25 C | 1200 | V |
| Continuous DC forward current | IF | 200 | A | |
| Repetitive peak forward current | IFRM | tP = 1 ms | 400 | A |
| I2t - value | I2t | tP = 10 ms, VR = 0 V | 5190 (Tvj = 125 C) 4690 (Tvj = 175 C) | As |
| Forward voltage | VF | IF = 200 A, VGE = 0 V | 1.72 - 2.10 (Tvj = 25 C) 1.59 (Tvj = 125 C) 1.52 (Tvj = 175 C) | V |
| Peak reverse recovery current | IRM | VR = 600 V, IF = 200 A, VGE = -15 V, -diF/dt = 2300 A/s | 92.5 - 149 | A |
| Recovered charge | Qr | VR = 600 V, IF = 200 A, VGE = -15 V, -diF/dt = 2300 A/s | 13 - 36.5 | C |
| Reverse recovery energy | Erec | VR = 600 V, IF = 200 A, VGE = -15 V, -diF/dt = 2300 A/s | 3.65 - 11.8 | mJ |
| Rated resistance | R25 | TNTC = 25 C | 5 | k |
| Deviation of R100 | R/R | TNTC = 100 C, R100 = 493 | -5 - 5 | % |
| Power dissipation | P25 | TNTC = 25 C | 20 | mW |
| B-value | B25/50 | 3375 | K | |
| B-value | B25/80 | 3411 | K | |
| B-value | B25/100 | 3433 | K | |
| Mechanical Features | ||||
| Stray inductance module | LsCE | 30 | nH | |
| Module lead resistance, terminals - chip | RCC'+EE' | TC=25C, per switch | 1.5 | m |
| Storage temperature | Tstg | -40 - 125 | C | |
| Mounting torque for module mounting | M | M5, Screw | 3 - 6 | Nm |
| Weight | G | 300 | g | |
| Insulation test voltage | VISOL | RMS, f = 50 Hz, t = 1 min | 2.5 | kV |
| Material of module baseplate | Cu | |||
| Internal isolation | basic insulation (class 1, IEC 61140) | Al2O3 | ||
| Creepage distance | dCreep | terminal to heatsink | 10.0 | mm |
| Clearance | dClear | terminal to heatsink | 7.5 | mm |
| Comparative tracking index | CTI | >200 | ||
| Relative thermal index (electrical) | RTI housing | 140 | C | |
| Thermal resistance, junction to case | RthJC | per IGBT | 0.231 | K/W |
| Thermal resistance, case to heat sink | RthCH | per IGBT, grease= 1 W/(m*K) | 0.0690 | K/W |
| Temperature under switching conditions | Tvj op | -40 - 175 | C | |
| Thermal resistance, junction to case | RthJC | per diode | 0.376 | K/W |
| Thermal resistance, case to heat sink | RthCH | per diode, grease= 1 W/(m*K) | 0.0680 | K/W |
| Potential Applications | ||||
| Motor drives | ||||
| Auxiliary inverters | ||||
2411191537_Infineon-FS200R12N3T7_C42387482.pdf
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