Industrial Silicon PNP Darlington Transistor ISC FW26025A1 Featuring High Current Gain and Operation
Key Attributes
Model Number:
FW26025A1
Product Custom Attributes
Mfr. Part #:
FW26025A1
Package:
TO-3
Product Description
Product Overview
The ISC FW26025A1 is a Silicon PNP Darlington Power Transistor designed for linear and switching industrial equipment. It offers high DC current gain (hFE = 5000(Min)@ IC= -2A) and a Collector-Emitter Sustaining Voltage of -100V(Min). The device features minimum lot-to-lot variations for robust performance and reliable operation.
Product Attributes
- Brand: ISC
- Registered Trademark: ISC & ISCsemi
- Material: Silicon
Technical Specifications
| Symbol | Parameter | Value | Unit | Conditions |
| VCEO(SUS)* | Collector-Emitter Sustaining Voltage | -100 | V | IC= -100mA, IB= 0 |
| VCE(sat)-1* | Collector-Emitter Saturation Voltage | -2.0 | V | IC= -10A ,IB= -40mA |
| VCE(sat)-2* | Collector-Emitter Saturation Voltage | -3.0 | V | IC= -20A ,IB= -200mA |
| VBE(sat)* | Base-Emitter Saturation Voltage | -4 | V | IC= -20A ,IB= -200mA |
| V BE(on)* | Base-Emitter On Voltage | -2.8 | V | IC= -10A ; VCE= -3V |
| ICEO | Collector Cutoff current | -1 | mA | VCE= -50V, IB= 0 |
| ICEV | Collector Cutoff current(VBE=-1.5V) | -0.5 | mA | VCE= -100V, IB= 0 |
| -5 | VCE= -100V, IB= 0,Tc=150 | |||
| IEBO | Emitter Cutoff Current | -2 | mA | VEB= -5V; IC= 0 |
| hFE-1* | DC Current Gain | 5000 | IC= -2A ; VCE= -3V | |
| hFE-2* | DC Current Gain | 750-18000 | IC= -10A ; VCE= -3V | |
| hFE-3* | DC Current Gain | 200 | IC= -30A ; VCE= -3V | |
| VCBO | Collector-Base Voltage | -100 | V | |
| VCEO | Collector-Emitter Voltage | -100 | V | |
| VEBO | Emitter-Base Voltage | -5 | V | |
| IC | Collector Current-Continuous | -20 | A | |
| ICM | Collector Current-Peak | -40 | A | |
| IB | Base Current- Continuous | -0.5 | A | |
| PC | Collector Power Dissipation @TC=25 | 160 | W | |
| Tj | Junction Temperature | 200 | ||
| Tstg | Storage Temperature Range | -65~200 | ||
| Rth j-c | Thermal Resistance, Junction to Case | 1.09 | /W |
*Note: Pulse test: Pulse width=300us, duty cycle2%.
2412090934_ISC-FW26025A1_C5128639.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
