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quality Industrial grade 650V IGBT Infineon IKW75N65EL5 with low VCEsat and RAPID 1 antiparallel diode technology factory
quality Industrial grade 650V IGBT Infineon IKW75N65EL5 with low VCEsat and RAPID 1 antiparallel diode technology factory

Industrial grade 650V IGBT Infineon IKW75N65EL5 with low VCEsat and RAPID 1 antiparallel diode technology

Key Attributes
Model Number: IKW75N65EL5
Product Custom Attributes
Pd - Power Dissipation:
536W
Td(off):
275ns
Td(on):
40ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
42pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.2V@1mA
Operating Temperature:
-40℃~+175℃
Gate Charge(Qg):
436nC@15V
Reverse Recovery Time(trr):
114ns
Switching Energy(Eoff):
3.2mJ
Turn-On Energy (Eon):
1.61mJ
Input Capacitance(Cies):
12.1nF
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
150pF
Mfr. Part #:
IKW75N65EL5
Package:
TO-247-3
Product Description

Product Overview

The IKW75N65EL5 is a 650V DuoPack IGBT from Infineon's Low VCE(sat) series, featuring TRENCHSTOPTM 5 technology copacked with a RAPID 1 fast and soft antiparallel diode. This IGBT offers a best-in-class tradeoff between conduction and switching losses due to its very low collector-emitter saturation voltage (VCEsat). It is designed for industrial applications requiring high performance and reliability, with a maximum junction temperature of 175C and qualified according to JEDEC standards.

Product Attributes

  • Brand: Infineon
  • Technology: TRENCHSTOPTM 5
  • Diode Type: RAPID 1
  • Series: Low VCE(sat) fifth generation
  • Certifications: JEDEC qualified, RoHS compliant
  • Lead Plating: Pb-free

Technical Specifications

TypeVCEIC (TC=25C)IC (TC=100C)VCEsat (Tvj=25C)TvjmaxMarkingPackage
IKW75N65EL5650V80.0A80.0A1.1V175CK75EEL5PG-TO247-3
ParameterSymbolConditionsMax. ValueUnit
IGBT thermal resistance, junction - caseRth(j-c)0.28K/W
Diode thermal resistance, junction - caseRth(j-c)0.46K/W
Thermal resistance junction - ambientRth(j-a)40K/W
ParameterSymbolConditionsMin.Typ.Max.Unit
Collector-emitter breakdown voltageV(BR)CESVGE = 0V, IC = 0.20mA650--V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 75.0A-1.101.35V
Diode forward voltageVFVGE = 0V, IF = 75.0A-1.401.70V
Gate-emitter threshold voltageVGE(th)IC = 1.00mA, VCE = VGE4.25.05.8V
Zero gate voltage collector currentICESVCE = 650V, VGE = 0V--1000.0A
Gate-emitter leakage currentIGESVCE = 0V, VGE = 20V--100nA
TransconductancegfsVCE = 20V, IC = 75.0A-155.0-S
Input capacitanceCiesVCE = 25V, VGE = 0V, f = 1MHz-12100-pF
Output capacitanceCoesVCE = 25V, VGE = 0V, f = 1MHz-150-pF
Reverse transfer capacitanceCresVCE = 25V, VGE = 0V, f = 1MHz-42-pF
Gate chargeQGVCC = 520V, IC = 75.0A, VGE = 15V-436.0-nC
Internal emitter inductanceLEmeasured 5mm from case-13.0-nH
Turn-on delay time (IGBT, Tvj=25C)td(on)Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 4.0-40-ns
Rise time (IGBT, Tvj=25C)trTvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 4.0-11-ns
Turn-off delay time (IGBT, Tvj=25C)td(off)Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 4.0-275-ns
Fall time (IGBT, Tvj=25C)tfTvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 4.0-50-ns
Turn-on energy (IGBT, Tvj=25C)EonTvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 4.0-1.61-mJ
Turn-off energy (IGBT, Tvj=25C)EoffTvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 4.0-3.20-mJ
Total switching energy (IGBT, Tvj=25C)EtsTvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 4.0-4.81-mJ
Diode reverse recovery time (Tvj=25C)trrTvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1500A/s-114-ns
Diode reverse recovery charge (Tvj=25C)QrrTvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1500A/s-1.37-C
Diode peak reverse recovery current (Tvj=25C)IrrmTvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1500A/s-29.0-A
Diode peak rate of fall of reverse recovery current (Tvj=25C)dirr/dtTvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1500A/s--2170-A/s
Turn-on delay time (IGBT, Tvj=150C)td(on)Tvj = 150C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 4.0-39-ns
Rise time (IGBT, Tvj=150C)trTvj = 150C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 4.0-14-ns
Turn-off delay time (IGBT, Tvj=150C)td(off)Tvj = 150C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 4.0-330-ns
Fall time (IGBT, Tvj=150C)tfTvj = 150C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 4.0-144-ns
Turn-on energy (IGBT, Tvj=150C)EonTvj = 150C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 4.0-2.12-mJ
Turn-off energy (IGBT, Tvj=150C)EoffTvj = 150C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 4.0-5.10-mJ
Total switching energy (IGBT, Tvj=150C)EtsTvj = 150C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 4.0-7.22-mJ
Diode reverse recovery time (Tvj=150C)trrTvj = 150C, VR = 400V, IF = 75.0A, diF/dt = 1500A/s-95-ns
Diode reverse recovery charge (Tvj=150C)QrrTvj = 150C, VR = 400V, IF = 75.0A, diF/dt = 1500A/s-2.43-C
Diode peak reverse recovery current (Tvj=150C)IrrmTvj = 150C, VR = 400V, IF = 75.0A, diF/dt = 1500A/s-40.0-A
Diode peak rate of fall of reverse recovery current (Tvj=150C)dirr/dtTvj = 150C, VR = 400V, IF = 75.0A, diF/dt = 1500A/s--2900-A/s

2410121742_Infineon-IKW75N65EL5_C454251.pdf

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