IGBT Device Infineon IHW40N135R5 Featuring Monolithic Body Diode and Low VCEsat for Microwave Ovens
Key Attributes
Model Number:
IHW40N135R5
Product Custom Attributes
Pd - Power Dissipation:
394W
Td(off):
410ns
Collector-Emitter Breakdown Voltage (Vces):
1.35kV
Reverse Transfer Capacitance (Cres):
60pF
Input Capacitance(Cies):
2.36nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@1mA
Gate Charge(Qg):
305nC@15V
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
120A
Output Capacitance(Coes):
70pF
Switching Energy(Eoff):
2mJ
Mfr. Part #:
IHW40N135R5
Package:
TO-247-3
Product Description
Product Overview
The IHW40N135R5 is a Resonant Switching Series Reverse Conducting IGBT with a monolithic body diode, designed for soft commutation. It features TRENCHSTOP technology for excellent parameter distribution, high ruggedness, stable temperature behavior, low VCEsat, and easy parallel switching. This IGBT also offers low EMI and is qualified according to JESD-022 for target applications. It is Pb-free, RoHS compliant, and halogen-free.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOP
- Certifications: Pb-free lead plating, RoHS compliant, Halogen free (according to IEC 61249-2-21)
- Applications: Induction cooking, Microwave ovens
Technical Specifications
| Type | VCE | IC | VCEsat, Tvj=25C | Tvjmax | Marking | Package |
|---|---|---|---|---|---|---|
| IHW40N135R5 | 1350V | 40A | 1.65V | 175C | H40PR5 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.50mA | 1350 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 40.0A, Tvj = 25C | 1.65 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 40.0A, Tvj = 25C | 1.95 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 1.00mA, VCE = VGE | 5.1 - 6.4 | V |
| Zero gate voltage collector current | ICES | VCE = 1350V, VGE = 0V, Tvj = 25C | 850 | µA |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 40.0A | 30.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 2360 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 70 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 60 | pF |
| Gate charge | QG | VCC = 1080V, IC = 40.0A, VGE = 15V | 305.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 410 | ns |
| Fall time | tf | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 90 | ns |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 2.00 | mJ |
| Turn-off energy, soft switching | Eoff | dv/dt = 200.0V/µs | 0.30 | mJ |
| Turn-off delay time | td(off) | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 480 | ns |
| Fall time | tf | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 220 | ns |
| Turn-off energy | Eoff | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 3.70 | mJ |
| Turn-off energy, soft switching | Eoff | dv/dt = 200.0V/µs | 0.85 | mJ |
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| IGBT thermal resistance, junction - case | Rth(j-c) | - | 0.38 | K/W |
| Diode thermal resistance, junction - case | Rth(j-c) | - | 0.38 | K/W |
| Thermal resistance junction - ambient | Rth(j-a) | - | 40 | K/W |
2410121815_Infineon-IHW40N135R5_C536128.pdf
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