PNP Power Transistor ISC 2SA1494 Featuring High Voltage and Linear DC Current Gain for General Purpose
Product Overview
The INCHANGE Semiconductor 2SA1494 is a silicon PNP power transistor designed for audio and general-purpose applications. It features a high Collector-Emitter Breakdown Voltage of -200V(Min) and good linearity of hFE, making it a complementary type to the 2SC3858.
Product Attributes
- Brand: INCHANGE Semiconductor
- Origin: isc
- Material: Silicon PNP
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ. | Max | Unit | |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA ; IB= 0 | -200 | V | |||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= -10A; IB= -1A | -2.5 | V | |||
| ICBO | Collector Cutoff Current | VCB= -200V ; IE= 0 | -100 | A | |||
| IEBO | Emitter Cutoff Current | VEB= -6V; IC= 0 | -100 | A | |||
| hFE | DC Current Gain | IC= -8A ; VCE= -4V | 50 | 180 | |||
| COB | Output Capacitance | IE= 0 ; VCB= -10V;ftest= 1.0MHz | 500 | pF | |||
| fT | Current-GainBandwidth Product | IE= 1A ; VCE= -12V | 20 | MHz | |||
| ton | Turn-on Time | IC= -10A ,RL= 4, IB1= -IB2= -1A,VCC= -40V | 0.6 | s | |||
| tstg | Storage Time | 0.9 | s | ||||
| tf | Fall Time | 0.2 | s | ||||
| VCBO | Collector-Base Voltage | -200 | V | ||||
| VCEO | Collector-Emitter Voltage | -200 | V | ||||
| VEBO | Emitter-Base Voltage | -6 | V | ||||
| IC | Collector Current-Continuous | -17 | A | ||||
| IB | Base Current-Continuous | -5 | A | ||||
| PC | Collector Power Dissipation @ TC=25 | 200 | W | ||||
| TJ | Junction Temperature | 150 | |||||
| Tstg | Storage Temperature Range | -55 | ~ | 150 | |||
| hFE Classifications | Y: 50-100, P: 70-140, G: 90-180 |
2411220221_ISC-2SA1494_C2976466.pdf
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