Power Transistor ISC 2N6036 Silicon PNP Darlington for Amplifier and Low Speed Switching Applications
Key Attributes
Model Number:
2N6036
Product Custom Attributes
Mfr. Part #:
2N6036
Package:
TO-126
Product Description
Product Overview
The 2N6036 is a Silicon PNP Darlington Power Transistor designed for general-purpose amplifier and low-speed switching applications. It offers a high DC Current Gain (hFE) of 750(Min) @ IC= -2A and a Collector-Emitter Sustaining Voltage of VCEO(SUS) = -80V(Min.). This device is a complement to the 2N6039 type, ensuring robust device performance and reliable operation with minimum lot-to-lot variations.
Product Attributes
- Brand: INCHANGE Semiconductor
- Registered Trademark: isc, iscsemi
- Material: Silicon
Technical Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= -10mA; IB= 0 | -80 | V | |
| VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= -2A; IB= -8mA | -2.0 | V | |
| VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= -4A; IB= -40mA | -3.0 | V | |
| VBE(sat) | Base-Emitter Saturation Voltage | IC= -4A; IB= -40mA | -4.0 | V | |
| VBE(on) | Base-Emitter On Voltage | IC= -2A; VCE= -3V | -2.8 | V | |
| ICEO | Collector Cutoff Current | VCE= -80V; IB= 0 | -0.1 | mA | |
| ICEX | Collector Cutoff Current | VCE=-80V;VBE(off)=-1.5V;TC= 125 | -0.1 | -0.5 | mA |
| ICBO | Collector Cutoff Current | VCB= -80V; IE= 0 | -0.5 | mA | |
| IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 | -2.0 | mA | |
| hFE-1 | DC Current Gain | IC= -0.5A ; VCE= -3V | 500 | ||
| hFE-2 | DC Current Gain | IC= -2A ; VCE= -3V | 750 | 15000 | |
| hFE-3 | DC Current Gain | IC= -4A ; VCE= -3V | 100 | ||
| COB | Output Capacitance | IE=0; VCB= -10V; f= 0.1MHz | 200 | pF | |
| VCBO | Collector-Base Voltage | -80 | V | ||
| VCEO | Collector-Emitter Voltage | -80 | V | ||
| VEBO | Emitter-Base Voltage | -5 | V | ||
| IC | Collector Current-Continuous | -4 | A | ||
| ICM | Collector Current-Peak | -8 | A | ||
| IB | Base Current | -0.1 | A | ||
| PC | Collector Power Dissipation | TC=25 | 40 | W | |
| Tj | Junction Temperature | 150 | |||
| Tstg | Storage Temperature Range | -65~150 | |||
| Rth j-c | Thermal Resistance,Junction to Case | 3.12 | /W | ||
| Rth j-a | Thermal Resistance,Junction to Ambient | 83.3 | /W |
2412091049_ISC-2N6036_C491410.pdf
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